E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50 nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (fmax) of 550 GHz and a current-gain cutoff frequency (fT) of 450 GHz at room temperature, which is first experimental demonstration that fmax as high as 550 GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3 dB with an associated gain of 20.6 dB at 79 GHz.

We fabricated 50-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates by using a conventional process under low temperatures, below 300C, to prevent fluorine contamination and suppress possible diffusion of the Si-δ-doped sheet in the electron-supply layer, and measured the DC and RF performance of the transistors. The DC measurement showed that the maximum transconductance gm of a 50-nm-gate HEMT is about 0.91 S/mm. The cutoff frequency fT of our 50-nm-gate HEMT is 362 GHz, which is much higher than the values reported for previous 50-nm-gate lattice-matched HEMTs. The excellent RF performance of our HEMTs results from a shortening of the lateral extended range of charge control by the drain field, and this may have been achieved because the low-temperature fabrication process suppressed degradation of epitaxial structure.

Since the birth of astrophysics, astronomers have been using free-space optics to analyze light falling on Earth. In the future however, thanks to the advances in photonics and nanoscience/nanotechnology, much of the manipulation of light might be carried out using not optics but confined waveguides, or circuits, on a chip. This new generation of instruments will be not only extremely compact, but also powerful in performance because the integration enables a greater degree of multiplexing. The benefit is especially profound for space- or air-borne observatories, where size, weight, and mechanical reliability are of top priority. Recently, several groups around the world are trying to integrate ultra-wideband (UWB), low-resolution spectrometers for millimeter-submillimeter waves onto microchips, using superconducting microelectronics. The scope of this Paper is to provide a general introduction and a review of the state-of-the-art of this rapidly advancing field.