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Eddy TAILLEFER Shoichi KITAZAWA Masazumi UEBA
We propose a proof-of-concept of a switchable multi-frequency MMIC (monolithic microwave integrated circuit) oscillator device, operating in the 60 GHz millimeter wave band, which is implemented in GaAs p-HEMT transistor technology. Oscillators that can switch between two frequencies have been designed, fabricated and evaluated. The oscillator uses a cross-coupled FET topology, combined with a bent asymmetric coplanar stripline for the resonator, and a switched-capacitor for the frequency switching components. The oscillator generates two oscillations at f/2 and f where f is the target frequency of around 60 GHz. The switchable oscillator has been demonstrated for the range of frequency from 44 GHz to 68.9 GHz. Moreover, the designed oscillator exhibits a wide-band negative resistance property that allows fabricating switchable oscillators covering the 50 to 75 GHz V-band. An evaluated switchable oscillator delivers -17.09 dBm and -13.72 dBm output power at 62.45 GHz and 64.78 GHz, for a supplied power of 40.6 mW and 39.1 mW, respectively.