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Hideki HAYASHI Goro SASAKI Hiroshi YANO Naoki NISHIYAMA Michio MURATA
Ultrahigh speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays comprising GaInAs pin PDs and A1InAs/GaInAs HEMTs have been successfully fabricated on an InP substrate. These arrays were designed to have good crosstalk characteristics which are the most critical issue in array devices. The resistive-load OEIC arrays exhibited high speed operation up to 5 Gb/s and low crosstalk of less than -38 dB between whole adjacent channels over entire frequency range below 4.0 GHz. The average sensitivity of resistive-load OEIC arrays was -18.5 dBm at 3 Gb/s for a bit-error-rate of 10-9 over four channels. Good uniformity of device characteristics was obtained over 2-inch InP wafer. These results suggest that receiver OEIC arrays are quite promising for the application to high-speed multi-channel optical interconnections.
Takashi KATO Toshio TAKAGI Atsushi HAMAKAWA Keiko IWAI Goro SASAKI
Operation of fiber-grating semiconductor laser (FGL) has been stabilized by using the semiconductor optical amplifier which has a simple slant-waveguide structure. The emission wavelength, which depends on a temperature, shows hysteresis. Employing the directly modulated FGL at 2.5 Gb/s, transmission over 400 km in standard optical fiber has been successfully achieved.
Hiroshi YANO Sosaku SAWADA Kentaro DOGUCHI Takashi KATO Goro SASAKI
A two-dimensional receiver OEIC array having an address selector for highly parallel interprocessor networks has been realized. The receiver OEIC array consists of two-dimensionally arranged 1616 (256) optical receiver cells with switching transistors, address selectors (decoders), and a comparator. Each optical receiver comprises a pin PD and a transimpedance-type HBT amplifier. The HBT has an InP passivation structure to suppress the emitter-size effect, which results in the improvement of current gains, especially at low collector current densities. The receiver OEIC array was fabricated on a 3-inch diameter InP substrate with pin/HBT integration technology. Due to the function of address selection, only one cell is activated and the other cells are mute, so the receiver OEIC array shows low crosstalk and low power consumption characteristics. The array also shows a 266-Mb/s data transmission capability. This receiver OEIC array is a most complex InP-based OEIC ever reported. The realization of the two-dimensional receiver OEIC array promises the future interprocessor networks with highly parallel optical interconnections.
Takashi KATO Toshio TAKAGI Atsushi HAMAKAWA Keiko IWAI Goro SASAKI
Operation of fiber-grating semiconductor laser (FGL) has been stabilized by using the semiconductor optical amplifier which has a simple slant-waveguide structure. The emission wavelength, which depends on a temperature, shows hysteresis. Employing the directly modulated FGL at 2.5 Gb/s, transmission over 400 km in standard optical fiber has been successfully achieved.