A 167-MHz 1-Mbit CMOS synchronous cache SRAM was developed using 0.40-µm process technology. The floor plan was designed so that the address registers are located in the center of the chip, and high-speed circuits were developed such as the quasi latch (QL) sense amplifier and the one-shot control (OSC) output register. To maintain suitable setup and hold time margins, an equivalent margin (EM) design method was developed. 167-MHz operation was measured at a supply voltage of 2.5 V and an ambient temperature of 75. The same margins 1.1 ns of the setup time and hold time were measured for the specifications of a setup time of 2.0 ns and a hold time of 0.5 ns.