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Kazunari HARADA Kenji SHIMIZU Nobuhiro SUGANO Teruhiko KUDOU Takeshi OZEKI
Wavelength division multiplex (WDM) photonic networks are expected as the key for the global communication infrastructure. Recent increase of communication demands require large-scale highly-dense WDM systems, which results in severe requirements for optical cross-connect systems, such as cross-talk specification. In this paper, we propose a new optical path cross-connect system (OPXC) using matrix-WDM scheme, which makes it possible to reduce cross-talk requirements of WDM filters and to construct OPXC in modular structures. The matrix-WDM scheme is a concept of two-layered optical paths, which provides wavelength group managements in the fiber dispersion equalization and EDFA gain equalization.
Kazunari HARADA Kenji SHIMIZU Nobuhiro SUGANO Teruhiko KUDOU Takeshi OZEKI
Wavelength division multiplex (WDM) photonic networks are expected as the key for the global communication infrastructure. Recent increase of communication demands require large-scale highly-dense WDM systems, which results in severe requirements for optical cross-connect systems, such as cross-talk specification. In this paper, we propose a new optical path cross-connect system (OPXC) using matrix-WDM scheme, which makes it possible to reduce cross-talk requirements of WDM filters and to construct OPXC in modular structures. The matrix-WDM scheme is a concept of two-layered optical paths, which provides wavelength group managements in the fiber dispersion equalization and EDFA gain equalization.
Kazunari HARADA Kenji SHIMIZU Nobuhiro SUGANO Teruhiko KUDOU Takeshi OZEKI
Wavelength Division Multiplex (WDM) photonic networks are expected as key for global communication infrastructure. The accurate measurement methods for AWG-MUX/DMUX are desirable for WDM network design. We measured a transfer function matrix of an AWG-MUX to find that polarization mode dispersion (PMD) and polarization dependent loss (PDL) shows the bandpass characteristics, which may limit the maximum size and the bit rate of the system. These bandpass characteristics of PMD and PDL are reproduced by a simple AWG-MUX model: The phase constant difference of 0.5% between orthogonal modes in arrayed waveguides is sufficient to obtain the measured passband characteristics of PMD and PDL. We find phase distribution difference between two orthogonal modes in the arrayed waveguide grating gives arise to complex PMD.
Kazunari HARADA Kenji SHIMIZU Nobuhiro SUGANO Teruhiko KUDOU Takeshi OZEKI
Wavelength Division Multiplex (WDM) photonic networks are expected as key for global communication infrastructure. The accurate measurement methods for AWG-MUX/DMUX are desirable for WDM network design. We measured a transfer function matrix of an AWG-MUX to find that polarization mode dispersion (PMD) and polarization dependent loss (PDL) shows the bandpass characteristics, which may limit the maximum size and the bit rate of the system. These bandpass characteristics of PMD and PDL are reproduced by a simple AWG-MUX model: The phase constant difference of 0.5% between orthogonal modes in arrayed waveguides is sufficient to obtain the measured passband characteristics of PMD and PDL. We find phase distribution difference between two orthogonal modes in the arrayed waveguide grating gives arise to complex PMD.
Kazunari HARADA Naoki HOSHINO Mariko Takayanagi TAKAGI Ichiro YOSHII
When intermetal oxide film which contains much water deposited on MOSFET, degradation of hot carrier characteristics is enhanced. This mechanism is considered to be as follows. During the annealing process water is desorbed from the intermetal oxide. The desorbed water reaches the MOSFET and eventually hydrogens terminate silicon dangling bonds in the gate oxide. This paper describes a new approach which uses ESR to analyze this mechanism. The ESR measurement of number of the silicon dangling bonds in undoped polysilicon lying under the intermetal oxide shows that water diffuses from intermetal oxide to MOSFET during the annealing process. The water diffusion is blocked by introduction between the polysilicon and the intermetal oxides of P-SiN layer or CVD SiO2 damaged by implantation.