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[Author] Takahiro OHTOMO(2hit)

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  • Performance of Iterative Digital Self-Interference Canceler with Alternating Estimate Subtraction for OFDM Using Full Duplex

    Takahiro OHTOMO  Hiroki YAMADA  Mamoru SAWAHASHI  Keisuke SAITO  

     
    PAPER

      Pubricized:
    2019/02/20
      Vol:
    E102-B No:8
      Page(s):
    1490-1502

    In full duplex (FD), which improves the system capacity (or cell throughput) and reduces the transmission delay (or latency) through simultaneous transmission and reception in the same frequency band, self-interference (SI) from the transmitter should be suppressed using antenna isolation, an analog SI canceler, and digital SI canceler (DSIC) to a level such that the data or control channel satisfies the required block error rate (BLER). This paper proposes a structure of iterative DSIC with alternating estimate subtraction (AES-IDSIC) for orthogonal frequency division multiplexing (OFDM) using FD. We first present the required SI suppression level considering SI, quantization noise of an analog-to-digital converter, and nonlinear distortion of a power amplifier and RF receiver circuit for a direct conversion transceiver using FD. Then, we propose an AES-IDSIC structure that iterates the generation of the SI estimate, the downlink symbol estimate, and then alternately removes one of the estimates from the received signal in the downlink including SI. We investigate the average BLER performance of the AES-IDSIC for OFDM using FD in a multipath fading channel based on link-level simulations under the constraint that the derived required signal-to-SI ratio must be satisfied.

  • Influence of Polymer Gate Dielectrics on p-Channel and n-Channel Formation of Fluorene-type Polymer Light-emitting Transistors

    Hirotake KAJII  Masato ISE  Hitoshi TANAKA  Takahiro OHTOMO  Yutaka OHMORI  

     
    BRIEF PAPER

      Vol:
    E98-C No:2
      Page(s):
    139-142

    The effects of the gate dielectrics on ambipolar transport in top-gate-type polymer light-emitting transistors with single-layer and bilayer gate dielectrics are investigated. Hole field-effect mobility is dependent on the dielectric constant of the gate dielectric onto the active layer. Hole transport of devices is affected by the dipolar disorder in the first gate dielectric layer on the active layer. Electron threshold voltage tends to decrease with increasing the total stacked gate capacitance.

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