We propose a transfer gate phase coupler for a low-power multi-phase oscillator (MPOSC). The phase coupler is an nMOS transfer gate, which does not waste charge to the ground and thus achieves low power. The proposed MPOSC can set the number of outputs to an arbitrary number. The test circuit in a 180-nm process and a 65-nm process exhibits 20 phases, including 90 different angles. The designs in a 180-nm CMOS process and a 65-nm CMOS process were fabricated to confirm its process scalability; in the respective designs, we observed 36.6% and 38.3% improvements in a power-delay products, compared with the conventional MPOSCs using inverters and nMOS latches. In a 65-nm process, the measured DNL and 3σ period jitter are, respectively, less than 1.22 and 5.82 ps. The power is 284 µW at 1.85 GHz.

We present a small-area second-order all-digital time-to-digital converter (TDC) with two frequency shift oscillators (FSOs) comprising inverter chains and dynamic flipflops featuring low jitter. The proposed FSOs can maintain their phase states through continuous oscillation, unlike conventional gated ring oscillators (GROs) that are affected by transistor leakage. Our proposed FSOTDC is more robust and is eligible for all-digital TDC architectures in recent leaky processes. Low-jitter dynamic flipflops are adopted as a quantization noise propagator (QNP). A frequency mismatch occurring between the two FSOs can be canceled out using a least mean squares (LMS) filter so that second-order noise shaping is possible. In a standard 65-nm CMOS process, an SNDR of 61 dB is achievable at an input bandwidth of 500 kHz and a sampling rate of 16 MHz, where the respective area and power are 700 µm2 and 281 µW.

We present an I/O-size second-order analog to digital converter (ADC) combined with a time-to-digital converter (TDC) and a voltage-to-time converter (VTC). Our proposed VTC is optimized for metal--oxide--metal (MOM) capacitances, and is charged to the MOM capacitances by an input voltage. In a standard 65-nm CMOS process, a signal to noise and distortion ratio (SNDR) of 50,dB (8 bits) is achievable at an input signal frequency of 78,kHz and a sampling rate of 20,MHz, where the respective area and power are 6468,mm$^{mathrm{2}}$ and 509 $mu$W. The measured maximum integral nonlinearity (INL) of the proposed ADC is $-$1.41 LSBs. The active area of the proposed ADC is smaller than an I/O buffer. The proposed ADC is useful as an ADC I/O.

Concomitantly with the progress of wireless communications, cognitive radio has attracted attention as a solution for depleted frequency bands. Cognitive radio is suitable for wireless sensor networks because it reduces collisions and thereby achieves energy-efficient communication. To make cognitive radio practical, we propose a low-power multi-resolution spectrum sensing (MRSS) architecture that has flexibility in sensing frequency bands. The conventional MRSS scheme consumes much power and can be adapted only slightly to process scaling because it comprises analog circuits. In contrast, the proposed architecture carries out signal processing in a digital domain and can detect occupied frequency bands at multiple resolutions and with low power. Our digital MRSS module can be implemented in 180-nm and 65-nm CMOS processes using Verilog-HDL. We confirmed that the processes respectively dissipate 9.97 mW and 3.45 mW.

This paper presents a second-order ΔΣ analog-to-digital converter (ADC) operating in a time domain. In the proposed ADC architecture, a voltage-controlled delay unit (VCDU) converts an input analog voltage to a delay time. Then, the clocks outputs from a gated ring oscillator (GRO) are counted during the delay time. No switched capacitor or opamp is used. Therefore, the proposed ADC can be implemented in a small area and with low power. For that reason, it has process scalability: it can keep pace with Moore's law. A time error is propagated to the second GRO by a multi-stage noise-shaping (MASH) topology, which provides second-order noise-shaping. In a standard 40-nm CMOS process, a SNDR of 45 dB is achievable at input bandwidth of 16 kHz and a sampling rate of 8 MHz, where the power is 408.5 µW. Its area is 608 µm2.

We present a low-jitter design for a 10-bit second-order frequency shift oscillator time-to-digital converter (FSOTDC). As described herein, we analyze the relation between performance and FSOTDC parameters and provide insight to support the design of the FSOTDC. Results show that an oscillator jitter limits the FSOTDC resolution, particularly during the first stage. To estimate and design an FSOTDC, the frequency shift oscillator requires an inverter of a certain size. In a standard 65-nm CMOS process, an SNDR of 64dB is achievable at an input signal frequency of 10kHz and a sampling clock of 2MHz. Measurements of the test chip confirmed that the measurements match the analyses.

This paper presents an ultra-low-power single-chip sensor-node VLSI for wireless-sensor-network applications. A communication centric design approach has been introduced to reduce the power consumption of the RF circuits and the entire sensor network system, through a vertical cooperative design among circuits, architecture, and communication protocols. The sensor-node LSI features a synchronous media access control (MAC) protocol and integrates a transceiver, i8051 microcontroller, and dedicated MAC processor. The test chip occupies 33 mm2 in a 180-nm CMOS process, including 1.38 M transistors. It dissipates 58.0 µW under a network environment.