This letter proposes a power amplifier (PA) with compact matching network. This structure is a parallel dual radial microstrip line in the output matching network branch. The input impedance expression based on the structure is deduced through theoretical analysis, and the load impedance that satisfies the class EFJ PA is obtained through the impedance expression. Compared with the traditional design method, this design method is simple and novel, and the structure is more compact. In order to further improve efficiency and expand bandwidth, the input matching network adopts a stepped impedance matching method. In order to verify the correctness of the design, a broadband high-efficiency PA was designed using GaN HEMT CGH40010F. The test results show that the drain efficiency is 61%-71% in the frequency band 1.4-3.8GHz, the saturated output power is 40.3-41.8dBm, and the size is 53×47mm2.