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[Keyword] 3-D IC(2hit)

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  • A Study of Physical Design Guidelines in ThruChip Inductive Coupling Channel

    Li-Chung HSU  Junichiro KADOMOTO  So HASEGAWA  Atsutake KOSUGE  Yasuhiro TAKE  Tadahiro KURODA  

     
    PAPER-Physical Level Design

      Vol:
    E98-A No:12
      Page(s):
    2584-2591

    ThruChip interface (TCI) is an emerging wireless interface in three-dimensional (3-D) integrated circuit (IC) technology. However, the TCI physical design guidelines remain unclear. In this paper, a ThruChip test chip is designed and fabricated for design guidelines exploration. Three inductive coupling interface physical design scenarios, baseline, power mesh, and dummy metal fill, are deployed in the test chip. In the baseline scenario, the test chip measurement results show that thinning chip or enlarging coil dimension can further reduce TCI power. The power mesh scenario shows that the eddy current on power mesh can dramatically reduce magnetic pulse signal and thus possibly cause TCI to fail. A power mesh splitting method is proposed to effectively suppress eddy current impact while minimizing power mesh structure impact. The simulation results show that the proposed method can recover 77% coupling coefficient loss while only introducing additional 0.5% IR-drop. In dummy metal fill case, dummy metal fill enclosed within TCI coils have no impact on TCI transmission and thus are ignorable.

  • Signal Propagation Delay Model in Vertically Stacked Chips

    Nanako NIIOKA  Masayuki WATANABE  Masa-aki FUKASE  Masashi IMAI  Atsushi KUROKAWA  

     
    PAPER-Device and Circuit Modeling and Analysis

      Vol:
    E98-A No:12
      Page(s):
    2614-2624

    To design high quality three-dimensional integrated circuits (3-D ICs), the effect of process and design parameters on delay must be adequately understood. This paper presents an electrical circuit model of an entire structure in through silicon via (TSV) based 3-D ICs with a new equation for on-chip interconnect capacitance and then proposes an effective model for evaluating signal propagation delay in vertically stacked chips. All electrical parameter values can be calculated by the closed-form equations without a field solver. The delay model is constructed with the first- or second-order function of each parameter to the delay obtained from a typical structure. The results obtained by on-chip interconnect capacitance equations and delay model are in excellent agreement with those by a field solver and circuit simulator, respectively. We also show that the model is very useful for evaluating effects of the process and design parameters on vertical signal propagation delay such as the sensitivity and variability analysis.

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