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Hanli LIU Teerachot SIRIBURANON Kengo NAKATA Wei DENG Ju Ho SON Dae Young LEE Kenichi OKADA Akira MATSUZAWA
This paper presents a 27.5-29.6GHz fractional-N frequency synthesizer using reference and frequency doublers to achieve low in-band and out-of-band phase-noise for 5G mobile communications. A consideration of the baseband carrier recovery circuit helps estimate phase noise requirement for high modulation scheme. The push-push amplifier and 28GHz balun help achieving differential signals with low out-of-band phase noise while consuming low power. A charge pump with gated offset as well as reference doubler help reducing PD noise resulting in low in-band phase noise while sampling loop filter helps reduce spurs. The proposed synthesizer has been implemented in 65nm CMOS technology achieving an in-band and out-of-band phase noise of -78dBc/Hz and -126dBc/Hz, respectively. It consumes only a total power of 33mW. The jitter-power figure-of-merit (FOM) is -231dB which is the highest among the state of the art >20GHz fractional-N PLLs using a low reference clock (<200MHz). The measured reference spurs are less than -80dBc.
Bangan LIU Yun WANG Jian PANG Haosheng ZHANG Dongsheng YANG Aravind Tharayil NARAYANAN Dae Young LEE Sung Tae CHOI Rui WU Kenichi OKADA Akira MATSUZAWA
An energy efficient modulator for an ultra-low-power (ULP) 60-GHz IEEE transmitter is presented in this paper. The modulator consists of a differential duobinary coder and a semi-digital finite-impulse-response (FIR) pulse-shaping filter. By virtue of differential duobinary coding and pulse shaping, the transceiver successfully solves the adjacent-channel-power-ratio (ACPR) issue of conventional on-off-keying (OOK) transceivers. The proposed differential duobinary code adopts an over-sampling precoder, which relaxes timing requirement and reduces power consumption. The semi-digital FIR eliminates the power hungry digital multipliers and accumulators, and improves the power efficiency through optimization of filter parameters. Fabricated in a 65nm CMOS process, this modulator occupies a core area of 0.12mm2. With a throughput of 1.7Gbps/2.6Gbps, power consumption of modulator is 24.3mW/42.8mW respectively, while satisfying the IEEE 802.11ad spectrum mask.