This paper proposes a knowledge-based design method of a protocol of a communication network system based on the knowledge-based design methodology for computer communication systems. In the proposed method, two knowledge models, i.e., the communication network architecture model (CNAM) and the communication protocol architecture model (CPAM), are introduced and a protocol design task is modeled as a successive transformation process of these knowledge models. Giving CNAM which represents the users' requirements concerning a communication network system, the requirements specification of a protocol is derived from CNAM and represented as CPAM. Then, the detailed requirements specification of a protocol is also derived from CPAM and represented by the formal description technique (FDT-Expressions). The derivations of CPAM and FDT-Expressions are executed by the transformation rules which represent the mappings between knowledge models. Due to formally defined knowledge models and mappings, the proposed method provides a framework of a systematic support of knowledge-based protocol design. In this paper, the formal definitions of CNAM and CPAM are given, then the derivation process of FDT-Expressions of a protocol is also formalized based on these knowledge models. Furthermore, a design example is demonstrated by using LOTOS as one of the FDT-Expressions of a protocol.

We propose Polarization-Shift-Keying (POLSK) homodyne system using phase-diversity receivers and theoretically analyze its bit-error-rate (BER) performance. Since the proposed system uses polarization modulation and homodyne detection, it can cancel the phase noise and is attractive at a high bit-rate transmission. It is found that the receiver sensitivity of the proposed POLSK homodyne system is the same as that of POLSK heterodyne system and is much better than that of DPSK phase-diversity homodyne systems at high signal-to-noise ratio (SNR). We also cosider theoreically the effect of the fluctuation of state of polarization (SOP) on the BER performance of POLSK homodyne system.

This paper describes the future perspective of automatic telephone interpretation using a multimedia intelligent communication network. The need for language interpretation over a telecommunication system creates a strong drive toward integrating information modalities for voice, image, data, computation and conferencing into modern systems using the capability of language interpretation. An automatic telephone interpretation system will solve the problems of language differences in international human-to-human communication. The future prospective of advanced multimedia language communication will be stated as the versatile application of an integrated intelligent network.

Transmittance distribution along a horizontal line in LCDs addressed by amorphous silicon TFTs was investigated using measurements and calculations. Nonuniformity of the distribution, in which the transmittance increased with increasing distance from the left edge of the LCD, was observed in a 10 inch diagonal TFT-LCD. The cause of the nonuniformity was attributed to the decrease in voltage drop due to the gate source parasitic capacitance and the increase in gate voltage fall time due to large line resistance, based on the measurements of voltage drops in TFT test elements and calculations considering the decrease in voltage drop. The distribution could be improved by reducing the line resistance and parasitic capacitance in the actual LCD.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.