This paper proposes a method for reducing redundant greedy-perimeter transitions in beacon-less geographic routing for wireless sensor networks (WSNs). Our method can be added to existing routing methods. Using a bloom filter, each node can detect a routing loop, and then the node stores the information as “failure history”. In the next forwarding the node can avoid such bad neighbors based on the failure history. Simulation results demonstrate the benefit of our method.

The purpose of this paper is to discuss length estimation based on digitized curves. Information on a curve in the Euclidean plane is lost after digitization. Higher resolution supports a convergence of a digital image towards the original curve with respect to Hausdorff metric. No matter how high resolution is assumed, it is impossible to know the length of an original curve exactly. In image analysis we estimate the length of a curve in the Euclidean plane based on an approximation. An approximate polygon converges to the original curve with an increase of resolution. Several approximation methods have been proposed so far. This paper proposes a new approximation method which generates polygonal curves closer (in the sense of Hausdorff metric) in general to its original curves than any of the previously known methods and discusses its relevance for length estimation by proving a Convergence Theorem.

This paper describes a new measurement method of a CD-SEM with nanometer-level precision and good correlation with electrical characteristics for an actual device of ultra-large-scale integration (ULSI). With the decrease in feature size, the pattern to be measured tends to become a curved shape. In order to measure such a pattern within measurement precision on the order of 5 nm, two-dimensional measurement is effective. Here we report a new measurement algorithm featuring that the critical dimension is derived from the value of the area of a measurement pattern. We apply this measurement method to actual device of 64-Mbit DRAM and confirm the reproducibility of 3.6 nm for the gate linewidth measurement, and that of 5.6 nm for the hole diameter measurement. Furthermore, we verify that the measurement values of the gate linewidth have a strong correlation with the threshold voltage and those of the hole diameter also have a strong correlation with the contact resistance, respectively.