Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology can be used for RF CMOS circuit implementation. The realistic RF CMOS circuit implementation toward cognitive and/or SDR is discussed.

This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.

This paper presents a novel wide tuning range CMOS Voltage Controlled Oscillator (VCO). VCO uses an on-chip variable inductor as an additional variable element to extend the tuning range of VCO. The fabricated variable inductor achieves the variable range of 35%. The VCO was fabricated using 0.35 µm standard CMOS process, and can be tuned continuously from 2.13 GHz to 3.28 GHz (tuning range of 38%) without degradation of phase noise. Wide tunable LC-VCO using a variable inductor is one of the key circuits for reconfigurable RF circuit.