10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs

Masanobu OHHATA; Minoru TOGASHI; Koichi MURATA; Satoshi YAMAGUCHI Masao SUZUKI; Kazuo HAGIMOTO

10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs

Masanobu OHHATA, Minoru TOGASHI, Koichi MURATA, Satoshi YAMAGUCHI Masao SUZUKI, Kazuo HAGIMOTO

Full Text Views

0

Share
Cite this

Summary :

This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.

Publication: IEICE TRANSACTIONS on Communications Vol.E76-B No.7 pp.745-747

Publication Date: 1993/07/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section LETTER (Special Section of Letters Selected from the 1992 IEICE Fall Conference and the 1993 IEICE Spring Conference)

Category

Cite this

Copy

Masanobu OHHATA, Minoru TOGASHI, Koichi MURATA, Satoshi YAMAGUCHI Masao SUZUKI, Kazuo HAGIMOTO, "10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs" in IEICE TRANSACTIONS on Communications, vol. E76-B, no. 7, pp. 745-747, July 1993, doi: .
Abstract: This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.
URL: https://globals.ieice.org/en_transactions/communications/10.1587/e76-b_7_745/_p

Copy

@ARTICLE{e76-b_7_745,
author={Masanobu OHHATA, Minoru TOGASHI, Koichi MURATA, Satoshi YAMAGUCHI Masao SUZUKI, Kazuo HAGIMOTO, },
journal={IEICE TRANSACTIONS on Communications},
title={10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs},
year={1993},
volume={E76-B},
number={7},
pages={745-747},
abstract={This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.},
keywords={},
doi={},
ISSN={},
month={July},}

Copy

TY - JOUR
TI - 10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs
T2 - IEICE TRANSACTIONS on Communications
SP - 745
EP - 747
AU - Masanobu OHHATA
AU - Minoru TOGASHI
AU - Koichi MURATA
AU - Satoshi YAMAGUCHI Masao SUZUKI
AU - Kazuo HAGIMOTO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E76-B
IS - 7
JA - IEICE TRANSACTIONS on Communications
Y1 - July 1993
AB - This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.
ER -