Prospects and Problems in Fabrication of MgB<SUB>2</SUB> Josephson Junctions

Kenji UEDA; Michio NAITO

doi:10.1093/ietele/e88-c.2.226

Prospects and Problems in Fabrication of MgB₂ Josephson Junctions

Kenji UEDA, Michio NAITO

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We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB₂ toward superconducting electronics. The most serious problem in the thin film synthesis of MgB₂ is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB₂ in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB₂ films with T_c 35 K. Furthermore, technology to produce single-crystal epitaxial MgB₂ films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB₂ has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.2 pp.226-231

Publication Date: 2005/02/01

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DOI: 10.1093/ietele/e88-c.2.226

Type of Manuscript: INVITED REVIEW PAPER

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Kenji UEDA, Michio NAITO, "Prospects and Problems in Fabrication of MgB2 Josephson Junctions" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 2, pp. 226-231, February 2005, doi: 10.1093/ietele/e88-c.2.226.
Abstract: We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB₂ toward superconducting electronics. The most serious problem in the thin film synthesis of MgB₂ is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB₂ in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB₂ films with T_c 35 K. Furthermore, technology to produce single-crystal epitaxial MgB₂ films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB₂ has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.2.226/_p

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@ARTICLE{e88-c_2_226,
author={Kenji UEDA, Michio NAITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Prospects and Problems in Fabrication of MgB2 Josephson Junctions},
year={2005},
volume={E88-C},
number={2},
pages={226-231},
abstract={We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB₂ toward superconducting electronics. The most serious problem in the thin film synthesis of MgB₂ is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB₂ in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB₂ films with T_c 35 K. Furthermore, technology to produce single-crystal epitaxial MgB₂ films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB₂ has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.},
keywords={},
doi={10.1093/ietele/e88-c.2.226},
ISSN={},
month={February},}

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TY - JOUR
TI - Prospects and Problems in Fabrication of MgB2 Josephson Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 226
EP - 231
AU - Kenji UEDA
AU - Michio NAITO
PY - 2005
DO - 10.1093/ietele/e88-c.2.226
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2005
AB - We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB₂ toward superconducting electronics. The most serious problem in the thin film synthesis of MgB₂ is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB₂ in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB₂ films with T_c 35 K. Furthermore, technology to produce single-crystal epitaxial MgB₂ films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB₂ has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.
ER -