Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate

Ken TSUZUKI; Tadao ISHIBASHI; Hiroshi YASAKA; Yuichi TOHMORI

doi:10.1093/ietele/e88-c.5.960

Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate

Ken TSUZUKI, Tadao ISHIBASHI, Hiroshi YASAKA, Yuichi TOHMORI

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We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.960-966

Publication Date: 2005/05/01

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DOI: 10.1093/ietele/e88-c.5.960

Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)

Category: Optical Active Devices and Modules

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Ken TSUZUKI, Tadao ISHIBASHI, Hiroshi YASAKA, Yuichi TOHMORI, "Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 5, pp. 960-966, May 2005, doi: 10.1093/ietele/e88-c.5.960.
Abstract: We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.960/_p

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@ARTICLE{e88-c_5_960,
author={Ken TSUZUKI, Tadao ISHIBASHI, Hiroshi YASAKA, Yuichi TOHMORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate},
year={2005},
volume={E88-C},
number={5},
pages={960-966},
abstract={We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.},
keywords={},
doi={10.1093/ietele/e88-c.5.960},
ISSN={},
month={May},}

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TY - JOUR
TI - Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 960
EP - 966
AU - Ken TSUZUKI
AU - Tadao ISHIBASHI
AU - Hiroshi YASAKA
AU - Yuichi TOHMORI
PY - 2005
DO - 10.1093/ietele/e88-c.5.960
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.
ER -