An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference

Luis H.C. FERREIRA; Tales C. PIMENTA; Robson L. MORENO

doi:10.1093/ietele/e90-c.10.2044

An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference

Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO

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This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage, but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 µm n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/ for the -20 to +80 temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.10 pp.2044-2050

Publication Date: 2007/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.10.2044

Type of Manuscript: PAPER

Category: Electronic Circuits

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Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO, "An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 10, pp. 2044-2050, October 2007, doi: 10.1093/ietele/e90-c.10.2044.
Abstract: This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage, but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 µm n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/ for the -20 to +80 temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.10.2044/_p

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@ARTICLE{e90-c_10_2044,
author={Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference},
year={2007},
volume={E90-C},
number={10},
pages={2044-2050},
abstract={This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage, but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 µm n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/ for the -20 to +80 temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.},
keywords={},
doi={10.1093/ietele/e90-c.10.2044},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference
T2 - IEICE TRANSACTIONS on Electronics
SP - 2044
EP - 2050
AU - Luis H.C. FERREIRA
AU - Tales C. PIMENTA
AU - Robson L. MORENO
PY - 2007
DO - 10.1093/ietele/e90-c.10.2044
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2007
AB - This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage, but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 µm n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/ for the -20 to +80 temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.
ER -