The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional <I>V<SUB>BE</SUB></I> Amplification Scheme

Hiroki SAKURAI; Yasuhiro SUGIMOTO

doi:10.1093/ietele/e90-c.2.499

The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional V_BE Amplification Scheme

Hiroki SAKURAI, Yasuhiro SUGIMOTO

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This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional V_BE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified V_T (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for V_BE becomes less than one, and the voltage gain of the amplifier for V_T becomes small. This enables the size of bipolar transistors for V_T generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.2 pp.499-506

Publication Date: 2007/02/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.2.499

Type of Manuscript: PAPER

Category: Electronic Circuits

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Hiroki SAKURAI, Yasuhiro SUGIMOTO, "The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional VBE Amplification Scheme" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 2, pp. 499-506, February 2007, doi: 10.1093/ietele/e90-c.2.499.
Abstract: This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional V_BE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified V_T (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for V_BE becomes less than one, and the voltage gain of the amplifier for V_T becomes small. This enables the size of bipolar transistors for V_T generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.2.499/_p

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@ARTICLE{e90-c_2_499,
author={Hiroki SAKURAI, Yasuhiro SUGIMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional VBE Amplification Scheme},
year={2007},
volume={E90-C},
number={2},
pages={499-506},
abstract={This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional V_BE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified V_T (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for V_BE becomes less than one, and the voltage gain of the amplifier for V_T becomes small. This enables the size of bipolar transistors for V_T generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.},
keywords={},
doi={10.1093/ietele/e90-c.2.499},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional VBE Amplification Scheme
T2 - IEICE TRANSACTIONS on Electronics
SP - 499
EP - 506
AU - Hiroki SAKURAI
AU - Yasuhiro SUGIMOTO
PY - 2007
DO - 10.1093/ietele/e90-c.2.499
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2007
AB - This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional V_BE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified V_T (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for V_BE becomes less than one, and the voltage gain of the amplifier for V_T becomes small. This enables the size of bipolar transistors for V_T generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.
ER -