Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE

Jesse DARJA; Melvin J. CHAN; Shu-Rong WANG; Masakazu SUGIYAMA; Yoshiaki NAKANO

doi:10.1093/ietele/e90-c.5.1111

Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE

Jesse DARJA, Melvin J. CHAN, Shu-Rong WANG, Masakazu SUGIYAMA, Yoshiaki NAKANO

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Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.1111-1117

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.1111

Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)

Category: Semiconductor Devices

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Jesse DARJA, Melvin J. CHAN, Shu-Rong WANG, Masakazu SUGIYAMA, Yoshiaki NAKANO, "Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 1111-1117, May 2007, doi: 10.1093/ietele/e90-c.5.1111.
Abstract: Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.1111/_p

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@ARTICLE{e90-c_5_1111,
author={Jesse DARJA, Melvin J. CHAN, Shu-Rong WANG, Masakazu SUGIYAMA, Yoshiaki NAKANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE},
year={2007},
volume={E90-C},
number={5},
pages={1111-1117},
abstract={Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.},
keywords={},
doi={10.1093/ietele/e90-c.5.1111},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1117
AU - Jesse DARJA
AU - Melvin J. CHAN
AU - Shu-Rong WANG
AU - Masakazu SUGIYAMA
AU - Yoshiaki NAKANO
PY - 2007
DO - 10.1093/ietele/e90-c.5.1111
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.
ER -