Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer

Mitsuhiro HANABE; Yahya Moubarak MEZIANI; Taiichi OTSUJI; Eiichi SANO; Tanemasa ASANO

doi:10.1093/ietele/e90-c.5.949

Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer

Mitsuhiro HANABE, Yahya Moubarak MEZIANI, Taiichi OTSUJI, Eiichi SANO, Tanemasa ASANO

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We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.949-954

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.949

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Emerging Devices

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Mitsuhiro HANABE, Yahya Moubarak MEZIANI, Taiichi OTSUJI, Eiichi SANO, Tanemasa ASANO, "Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 949-954, May 2007, doi: 10.1093/ietele/e90-c.5.949.
Abstract: We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.949/_p

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@ARTICLE{e90-c_5_949,
author={Mitsuhiro HANABE, Yahya Moubarak MEZIANI, Taiichi OTSUJI, Eiichi SANO, Tanemasa ASANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer},
year={2007},
volume={E90-C},
number={5},
pages={949-954},
abstract={We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.},
keywords={},
doi={10.1093/ietele/e90-c.5.949},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer
T2 - IEICE TRANSACTIONS on Electronics
SP - 949
EP - 954
AU - Mitsuhiro HANABE
AU - Yahya Moubarak MEZIANI
AU - Taiichi OTSUJI
AU - Eiichi SANO
AU - Tanemasa ASANO
PY - 2007
DO - 10.1093/ietele/e90-c.5.949
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.
ER -