A CMOS Smart Thermal Sensor for Biomedical Application

Ho-Yin LEE; Shih-Lun CHEN; Ching-Hsing LUO

doi:10.1093/ietele/e91-c.1.96

A CMOS Smart Thermal Sensor for Biomedical Application

Ho-Yin LEE, Shih-Lun CHEN, Ching-Hsing LUO

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This paper describes a smart thermal sensing chip with an integrated vertical bipolar transistor sensor, a Sigma Delta Modulator (SDM), a Micro-Control Unit (MCU), and a bandgap reference voltage generator for biomedical application by using 0.18 µm CMOS process. The npn bipolar transistors with the Deep N-Well (DNW) instead of the pnp bipolar transistor is first adopted as the sensor for good isolation from substrate coupling noise. In addition to data compression, Micro-Control Unit (MCU) plays an important role for executing auto-calibration by digitally trimming the bipolar sensor in parallel to save power consumption and to reduce feedback complexity. It is different from the present analog feedback calibration technologies. Using one sensor, instead of two sensors, to create two differential signals in 180phase difference input to SDM is also a novel design of this work. As a result, in the range of 0 to 80 or body temperature (375), the inaccuracy is less than 0.1 or 0.05 respectively with one-point calibration after packaging. The average power consumption is 268.4 µW with 1.8 V supply voltage.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.1 pp.96-104

Publication Date: 2008/01/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.1.96

Type of Manuscript: PAPER

Category: Organic Molecular Electronics

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Ho-Yin LEE, Shih-Lun CHEN, Ching-Hsing LUO, "A CMOS Smart Thermal Sensor for Biomedical Application" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 1, pp. 96-104, January 2008, doi: 10.1093/ietele/e91-c.1.96.
Abstract: This paper describes a smart thermal sensing chip with an integrated vertical bipolar transistor sensor, a Sigma Delta Modulator (SDM), a Micro-Control Unit (MCU), and a bandgap reference voltage generator for biomedical application by using 0.18 µm CMOS process. The npn bipolar transistors with the Deep N-Well (DNW) instead of the pnp bipolar transistor is first adopted as the sensor for good isolation from substrate coupling noise. In addition to data compression, Micro-Control Unit (MCU) plays an important role for executing auto-calibration by digitally trimming the bipolar sensor in parallel to save power consumption and to reduce feedback complexity. It is different from the present analog feedback calibration technologies. Using one sensor, instead of two sensors, to create two differential signals in 180phase difference input to SDM is also a novel design of this work. As a result, in the range of 0 to 80 or body temperature (375), the inaccuracy is less than 0.1 or 0.05 respectively with one-point calibration after packaging. The average power consumption is 268.4 µW with 1.8 V supply voltage.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.1.96/_p

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@ARTICLE{e91-c_1_96,
author={Ho-Yin LEE, Shih-Lun CHEN, Ching-Hsing LUO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Smart Thermal Sensor for Biomedical Application},
year={2008},
volume={E91-C},
number={1},
pages={96-104},
abstract={This paper describes a smart thermal sensing chip with an integrated vertical bipolar transistor sensor, a Sigma Delta Modulator (SDM), a Micro-Control Unit (MCU), and a bandgap reference voltage generator for biomedical application by using 0.18 µm CMOS process. The npn bipolar transistors with the Deep N-Well (DNW) instead of the pnp bipolar transistor is first adopted as the sensor for good isolation from substrate coupling noise. In addition to data compression, Micro-Control Unit (MCU) plays an important role for executing auto-calibration by digitally trimming the bipolar sensor in parallel to save power consumption and to reduce feedback complexity. It is different from the present analog feedback calibration technologies. Using one sensor, instead of two sensors, to create two differential signals in 180phase difference input to SDM is also a novel design of this work. As a result, in the range of 0 to 80 or body temperature (375), the inaccuracy is less than 0.1 or 0.05 respectively with one-point calibration after packaging. The average power consumption is 268.4 µW with 1.8 V supply voltage.},
keywords={},
doi={10.1093/ietele/e91-c.1.96},
ISSN={1745-1353},
month={January},}

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TY - JOUR
TI - A CMOS Smart Thermal Sensor for Biomedical Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 96
EP - 104
AU - Ho-Yin LEE
AU - Shih-Lun CHEN
AU - Ching-Hsing LUO
PY - 2008
DO - 10.1093/ietele/e91-c.1.96
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2008
AB - This paper describes a smart thermal sensing chip with an integrated vertical bipolar transistor sensor, a Sigma Delta Modulator (SDM), a Micro-Control Unit (MCU), and a bandgap reference voltage generator for biomedical application by using 0.18 µm CMOS process. The npn bipolar transistors with the Deep N-Well (DNW) instead of the pnp bipolar transistor is first adopted as the sensor for good isolation from substrate coupling noise. In addition to data compression, Micro-Control Unit (MCU) plays an important role for executing auto-calibration by digitally trimming the bipolar sensor in parallel to save power consumption and to reduce feedback complexity. It is different from the present analog feedback calibration technologies. Using one sensor, instead of two sensors, to create two differential signals in 180phase difference input to SDM is also a novel design of this work. As a result, in the range of 0 to 80 or body temperature (375), the inaccuracy is less than 0.1 or 0.05 respectively with one-point calibration after packaging. The average power consumption is 268.4 µW with 1.8 V supply voltage.
ER -