The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC

Kiyoyuki IHARA

doi:10.1093/ietele/e91-c.3.366

The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC

Kiyoyuki IHARA

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The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.3 pp.366-372

Publication Date: 2008/03/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.3.366

Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

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Kiyoyuki IHARA, "The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 3, pp. 366-372, March 2008, doi: 10.1093/ietele/e91-c.3.366.
Abstract: The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.3.366/_p

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@ARTICLE{e91-c_3_366,
author={Kiyoyuki IHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC},
year={2008},
volume={E91-C},
number={3},
pages={366-372},
abstract={The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.},
keywords={},
doi={10.1093/ietele/e91-c.3.366},
ISSN={1745-1353},
month={March},}

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TY - JOUR
TI - The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC
T2 - IEICE TRANSACTIONS on Electronics
SP - 366
EP - 372
AU - Kiyoyuki IHARA
PY - 2008
DO - 10.1093/ietele/e91-c.3.366
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2008
AB - The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.
ER -