Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process

Jung-Sheng CHEN; Ming-Dou KER

doi:10.1093/ietele/e91-c.3.378

Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process

Jung-Sheng CHEN, Ming-Dou KER

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The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.3 pp.378-384

Publication Date: 2008/03/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.3.378

Type of Manuscript: PAPER

Category: Electronic Circuits

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Jung-Sheng CHEN, Ming-Dou KER, "Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 3, pp. 378-384, March 2008, doi: 10.1093/ietele/e91-c.3.378.
Abstract: The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.3.378/_p

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@ARTICLE{e91-c_3_378,
author={Jung-Sheng CHEN, Ming-Dou KER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process},
year={2008},
volume={E91-C},
number={3},
pages={378-384},
abstract={The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.},
keywords={},
doi={10.1093/ietele/e91-c.3.378},
ISSN={1745-1353},
month={March},}

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TY - JOUR
TI - Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 378
EP - 384
AU - Jung-Sheng CHEN
AU - Ming-Dou KER
PY - 2008
DO - 10.1093/ietele/e91-c.3.378
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2008
AB - The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.
ER -