Striped-Channel Low-Noise Pseudomorphic HEMT

Hisao KAWASAKI; Hiroshi ISHIMURA; Hirokuni TOKUDA

Striped-Channel Low-Noise Pseudomorphic HEMT

Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA

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Striped-channel low-noise AlGaAs/InGaAs pseudomorphic HEMTs with various stripe pitches have been developed. The DC and microwave characteristics have been investigated and compared to those of non-striped AlGaAs/InGaAs pseudomorphic HEMTs. It was found that both striped and non-striped HEMTs showed nearly constant noise figure for V_DS1.0-3.0 V, in contrast to the case of AlGaAs/GaAs HEMTs. This suggests that in the case of AlGaAs/InGaAs pseudomorphic HEMTs, that short-channel effect is almost suppressed even in the non-striped structure. A relatively low noise figure of 0.53 dB with a high associated gain of 13.5 dB has been obtained at 18 GHz from the 0.4 µm-pitch striped-channel pseudomorphic HEMT.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.12 pp.4110-4113

Publication Date: 1991/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)

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Hisao KAWASAKI
Hiroshi ISHIMURA
Hirokuni TOKUDA

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Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA, "Striped-Channel Low-Noise Pseudomorphic HEMT" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 12, pp. 4110-4113, December 1991, doi: .
Abstract: Striped-channel low-noise AlGaAs/InGaAs pseudomorphic HEMTs with various stripe pitches have been developed. The DC and microwave characteristics have been investigated and compared to those of non-striped AlGaAs/InGaAs pseudomorphic HEMTs. It was found that both striped and non-striped HEMTs showed nearly constant noise figure for V_DS1.0-3.0 V, in contrast to the case of AlGaAs/GaAs HEMTs. This suggests that in the case of AlGaAs/InGaAs pseudomorphic HEMTs, that short-channel effect is almost suppressed even in the non-striped structure. A relatively low noise figure of 0.53 dB with a high associated gain of 13.5 dB has been obtained at 18 GHz from the 0.4 µm-pitch striped-channel pseudomorphic HEMT.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e74-c_12_4110/_p

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@ARTICLE{e74-c_12_4110,
author={Hisao KAWASAKI, Hiroshi ISHIMURA, Hirokuni TOKUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Striped-Channel Low-Noise Pseudomorphic HEMT},
year={1991},
volume={E74-C},
number={12},
pages={4110-4113},
abstract={Striped-channel low-noise AlGaAs/InGaAs pseudomorphic HEMTs with various stripe pitches have been developed. The DC and microwave characteristics have been investigated and compared to those of non-striped AlGaAs/InGaAs pseudomorphic HEMTs. It was found that both striped and non-striped HEMTs showed nearly constant noise figure for V_DS1.0-3.0 V, in contrast to the case of AlGaAs/GaAs HEMTs. This suggests that in the case of AlGaAs/InGaAs pseudomorphic HEMTs, that short-channel effect is almost suppressed even in the non-striped structure. A relatively low noise figure of 0.53 dB with a high associated gain of 13.5 dB has been obtained at 18 GHz from the 0.4 µm-pitch striped-channel pseudomorphic HEMT.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Striped-Channel Low-Noise Pseudomorphic HEMT
T2 - IEICE TRANSACTIONS on Electronics
SP - 4110
EP - 4113
AU - Hisao KAWASAKI
AU - Hiroshi ISHIMURA
AU - Hirokuni TOKUDA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1991
AB - Striped-channel low-noise AlGaAs/InGaAs pseudomorphic HEMTs with various stripe pitches have been developed. The DC and microwave characteristics have been investigated and compared to those of non-striped AlGaAs/InGaAs pseudomorphic HEMTs. It was found that both striped and non-striped HEMTs showed nearly constant noise figure for V_DS1.0-3.0 V, in contrast to the case of AlGaAs/GaAs HEMTs. This suggests that in the case of AlGaAs/InGaAs pseudomorphic HEMTs, that short-channel effect is almost suppressed even in the non-striped structure. A relatively low noise figure of 0.53 dB with a high associated gain of 13.5 dB has been obtained at 18 GHz from the 0.4 µm-pitch striped-channel pseudomorphic HEMT.
ER -