Alpha-Particle-Induced Charge Amplification by Parasitic npn Transistor in Ultra-High-Speed Bipolar RAMs

Hiroaki NAMBU; Youji IDEI; Kazuo KANETANI; Kunihiko YAMAGUCHI; Noriyuki HOMMA; Kenichi OHHATA; Yoshiaki SAKURAI

Alpha-Particle-Induced Charge Amplification by Parasitic npn Transistor in Ultra-High-Speed Bipolar RAMs

Hiroaki NAMBU, Youji IDEI, Kazuo KANETANI, Kunihiko YAMAGUCHI, Noriyuki HOMMA, Kenichi OHHATA, Yoshiaki SAKURAI

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This paper describes a collected charge enhancement due to the alpha-particle-induced charge transfer through an extremely thin (less than 0.2µm) p-layer sandwiched between two n-layers. This charge enhancement is caused by a parasitic transistor composed of the p- and the two n-layers which is turned on by the alpha-particle-induced charge. The collected charge enhancement occurs depending on the impurity concentration and the thickness of the thin layer. The condition whether the charge enhancement occurs or not is determined quantitatively using a 3-D device simulator. The simulation and experimental results show that, if the collected charge enhancement occurs, the soft-error rate is dominantly determined by it and cannot be decreased by increasing the cell stored charge.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.4 pp.839-844

Publication Date: 1991/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories)

Category: SRAM

Authors

Hiroaki NAMBU
Youji IDEI
Kazuo KANETANI
Kunihiko YAMAGUCHI
Noriyuki HOMMA
Kenichi OHHATA
Yoshiaki SAKURAI

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Hiroaki NAMBU, Youji IDEI, Kazuo KANETANI, Kunihiko YAMAGUCHI, Noriyuki HOMMA, Kenichi OHHATA, Yoshiaki SAKURAI, "Alpha-Particle-Induced Charge Amplification by Parasitic npn Transistor in Ultra-High-Speed Bipolar RAMs" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 4, pp. 839-844, April 1991, doi: .
Abstract: This paper describes a collected charge enhancement due to the alpha-particle-induced charge transfer through an extremely thin (less than 0.2µm) p-layer sandwiched between two n-layers. This charge enhancement is caused by a parasitic transistor composed of the p- and the two n-layers which is turned on by the alpha-particle-induced charge. The collected charge enhancement occurs depending on the impurity concentration and the thickness of the thin layer. The condition whether the charge enhancement occurs or not is determined quantitatively using a 3-D device simulator. The simulation and experimental results show that, if the collected charge enhancement occurs, the soft-error rate is dominantly determined by it and cannot be decreased by increasing the cell stored charge.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e74-c_4_839/_p

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@ARTICLE{e74-c_4_839,
author={Hiroaki NAMBU, Youji IDEI, Kazuo KANETANI, Kunihiko YAMAGUCHI, Noriyuki HOMMA, Kenichi OHHATA, Yoshiaki SAKURAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Alpha-Particle-Induced Charge Amplification by Parasitic npn Transistor in Ultra-High-Speed Bipolar RAMs},
year={1991},
volume={E74-C},
number={4},
pages={839-844},
abstract={This paper describes a collected charge enhancement due to the alpha-particle-induced charge transfer through an extremely thin (less than 0.2µm) p-layer sandwiched between two n-layers. This charge enhancement is caused by a parasitic transistor composed of the p- and the two n-layers which is turned on by the alpha-particle-induced charge. The collected charge enhancement occurs depending on the impurity concentration and the thickness of the thin layer. The condition whether the charge enhancement occurs or not is determined quantitatively using a 3-D device simulator. The simulation and experimental results show that, if the collected charge enhancement occurs, the soft-error rate is dominantly determined by it and cannot be decreased by increasing the cell stored charge.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Alpha-Particle-Induced Charge Amplification by Parasitic npn Transistor in Ultra-High-Speed Bipolar RAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 839
EP - 844
AU - Hiroaki NAMBU
AU - Youji IDEI
AU - Kazuo KANETANI
AU - Kunihiko YAMAGUCHI
AU - Noriyuki HOMMA
AU - Kenichi OHHATA
AU - Yoshiaki SAKURAI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1991
AB - This paper describes a collected charge enhancement due to the alpha-particle-induced charge transfer through an extremely thin (less than 0.2µm) p-layer sandwiched between two n-layers. This charge enhancement is caused by a parasitic transistor composed of the p- and the two n-layers which is turned on by the alpha-particle-induced charge. The collected charge enhancement occurs depending on the impurity concentration and the thickness of the thin layer. The condition whether the charge enhancement occurs or not is determined quantitatively using a 3-D device simulator. The simulation and experimental results show that, if the collected charge enhancement occurs, the soft-error rate is dominantly determined by it and cannot be decreased by increasing the cell stored charge.
ER -