Tunneling Time Calculation for Double-Barrier Quantum Well with Trapezoidal Potential Profile

Hirokazu INABA; Kou KUROSAWA; Masahiro OKUDA

Tunneling Time Calculation for Double-Barrier Quantum Well with Trapezoidal Potential Profile

Hirokazu INABA, Kou KUROSAWA, Masahiro OKUDA

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We investigate time-dependent tunneling of wave packets through double-barrier structures with trapezoidal potential profiles. The potential profiles have been taken up as a model for structures in which the flat interfaces have been disturbed by roughened surfaces with interdiffusion of the constituent atoms. Time-dependent Schroedinger's equation, using effective mass approximation, is solved numerically. Studying the effects of the slope widths on tunneling time, lifetime and build-up time, for the particular case of the AlAs/GaAs/AlAs double-barrier structure having the barrier width of 2.3 nm and the well width of 5.0 nm, we show the slope width less than 0.6 nm does not significantly change the tunneling time. The lifetime and build-up time are shown to have different characteristics.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.5 pp.1310-1313

Publication Date: 1991/05/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Hirokazu INABA
Kou KUROSAWA
Masahiro OKUDA

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Hirokazu INABA, Kou KUROSAWA, Masahiro OKUDA, "Tunneling Time Calculation for Double-Barrier Quantum Well with Trapezoidal Potential Profile" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 5, pp. 1310-1313, May 1991, doi: .
Abstract: We investigate time-dependent tunneling of wave packets through double-barrier structures with trapezoidal potential profiles. The potential profiles have been taken up as a model for structures in which the flat interfaces have been disturbed by roughened surfaces with interdiffusion of the constituent atoms. Time-dependent Schroedinger's equation, using effective mass approximation, is solved numerically. Studying the effects of the slope widths on tunneling time, lifetime and build-up time, for the particular case of the AlAs/GaAs/AlAs double-barrier structure having the barrier width of 2.3 nm and the well width of 5.0 nm, we show the slope width less than 0.6 nm does not significantly change the tunneling time. The lifetime and build-up time are shown to have different characteristics.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e74-c_5_1310/_p

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@ARTICLE{e74-c_5_1310,
author={Hirokazu INABA, Kou KUROSAWA, Masahiro OKUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Tunneling Time Calculation for Double-Barrier Quantum Well with Trapezoidal Potential Profile},
year={1991},
volume={E74-C},
number={5},
pages={1310-1313},
abstract={We investigate time-dependent tunneling of wave packets through double-barrier structures with trapezoidal potential profiles. The potential profiles have been taken up as a model for structures in which the flat interfaces have been disturbed by roughened surfaces with interdiffusion of the constituent atoms. Time-dependent Schroedinger's equation, using effective mass approximation, is solved numerically. Studying the effects of the slope widths on tunneling time, lifetime and build-up time, for the particular case of the AlAs/GaAs/AlAs double-barrier structure having the barrier width of 2.3 nm and the well width of 5.0 nm, we show the slope width less than 0.6 nm does not significantly change the tunneling time. The lifetime and build-up time are shown to have different characteristics.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Tunneling Time Calculation for Double-Barrier Quantum Well with Trapezoidal Potential Profile
T2 - IEICE TRANSACTIONS on Electronics
SP - 1310
EP - 1313
AU - Hirokazu INABA
AU - Kou KUROSAWA
AU - Masahiro OKUDA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1991
AB - We investigate time-dependent tunneling of wave packets through double-barrier structures with trapezoidal potential profiles. The potential profiles have been taken up as a model for structures in which the flat interfaces have been disturbed by roughened surfaces with interdiffusion of the constituent atoms. Time-dependent Schroedinger's equation, using effective mass approximation, is solved numerically. Studying the effects of the slope widths on tunneling time, lifetime and build-up time, for the particular case of the AlAs/GaAs/AlAs double-barrier structure having the barrier width of 2.3 nm and the well width of 5.0 nm, we show the slope width less than 0.6 nm does not significantly change the tunneling time. The lifetime and build-up time are shown to have different characteristics.
ER -