Three-Dimensional Simulation of Low-Temperature Operation MOSFET's

You-Wen YI; Kazuya MASU; Kazuo TSUBOUCHI; Nobuo MIKOSHIBA

Three-Dimensional Simulation of Low-Temperature Operation MOSFET's

You-Wen YI, Kazuya MASU, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA

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Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.6 pp.1641-1647

Publication Date: 1991/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)

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You-Wen YI
Kazuya MASU
Kazuo TSUBOUCHI
Nobuo MIKOSHIBA

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You-Wen YI, Kazuya MASU, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA, "Three-Dimensional Simulation of Low-Temperature Operation MOSFET's" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 6, pp. 1641-1647, June 1991, doi: .
Abstract: Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e74-c_6_1641/_p

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@ARTICLE{e74-c_6_1641,
author={You-Wen YI, Kazuya MASU, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional Simulation of Low-Temperature Operation MOSFET's},
year={1991},
volume={E74-C},
number={6},
pages={1641-1647},
abstract={Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Three-Dimensional Simulation of Low-Temperature Operation MOSFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 1641
EP - 1647
AU - You-Wen YI
AU - Kazuya MASU
AU - Kazuo TSUBOUCHI
AU - Nobuo MIKOSHIBA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1991
AB - Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.
ER -