Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation

Koichi IIYAMA; Ken-ichi HAYASHI; Yoshio IDA

Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation

Koichi IIYAMA, Ken-ichi HAYASHI, Yoshio IDA

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Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.12 pp.1536-1540

Publication Date: 1992/12/25

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Type of Manuscript: PAPER

Category: Opto-Electronics

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Koichi IIYAMA, Ken-ichi HAYASHI, Yoshio IDA, "Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 12, pp. 1536-1540, December 1992, doi: .
Abstract: Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e75-c_12_1536/_p

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@ARTICLE{e75-c_12_1536,
author={Koichi IIYAMA, Ken-ichi HAYASHI, Yoshio IDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation},
year={1992},
volume={E75-C},
number={12},
pages={1536-1540},
abstract={Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1536
EP - 1540
AU - Koichi IIYAMA
AU - Ken-ichi HAYASHI
AU - Yoshio IDA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1992
AB - Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.
ER -