Application of Photoexcited Reaction to VLSI Process

Yasuhiro HORIIKE

Application of Photoexcited Reaction to VLSI Process

Yasuhiro HORIIKE

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Recent progress on photoexcited process applications to fabricating of VLSI and flat panel devices in Japan has been reviewed. The excimer laser melt technique makes it possible to form large-grain poly-Si film on a glass substrate, improving TFT electrical characteristics, and to fill metals into high-aspect-ratio contact holes in VLSI metallization. Scanning of CW laser in poly-Si film led to growth of a single-crystal Si layer on SiO₂ to fabricate 3-D (dimensional) devices successfully. Direct writing with pyrolytic reaction was put into practice for interconnection restructuring. In the photochemical process, lower temperature epitaxial growth of Si and dry cleaning of a Si wafer employing Hg lamp irradiation were noted. Directional etching was performed by sidewall film formation, while resolution of better than 0.5 µm was difficult to obtain due to diffraction limit. It was proposed that higher resolution would be obtained by introduction of a nonlinear process which enhanced pattern contrast.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.32-40

Publication Date: 1993/01/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Opto-Electronics and LSI)

Category: Opto-Electronics Technology for LSIs

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Yasuhiro HORIIKE, "Application of Photoexcited Reaction to VLSI Process" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 1, pp. 32-40, January 1993, doi: .
Abstract: Recent progress on photoexcited process applications to fabricating of VLSI and flat panel devices in Japan has been reviewed. The excimer laser melt technique makes it possible to form large-grain poly-Si film on a glass substrate, improving TFT electrical characteristics, and to fill metals into high-aspect-ratio contact holes in VLSI metallization. Scanning of CW laser in poly-Si film led to growth of a single-crystal Si layer on SiO₂ to fabricate 3-D (dimensional) devices successfully. Direct writing with pyrolytic reaction was put into practice for interconnection restructuring. In the photochemical process, lower temperature epitaxial growth of Si and dry cleaning of a Si wafer employing Hg lamp irradiation were noted. Directional etching was performed by sidewall film formation, while resolution of better than 0.5 µm was difficult to obtain due to diffraction limit. It was proposed that higher resolution would be obtained by introduction of a nonlinear process which enhanced pattern contrast.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e76-c_1_32/_p

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@ARTICLE{e76-c_1_32,
author={Yasuhiro HORIIKE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Application of Photoexcited Reaction to VLSI Process},
year={1993},
volume={E76-C},
number={1},
pages={32-40},
abstract={Recent progress on photoexcited process applications to fabricating of VLSI and flat panel devices in Japan has been reviewed. The excimer laser melt technique makes it possible to form large-grain poly-Si film on a glass substrate, improving TFT electrical characteristics, and to fill metals into high-aspect-ratio contact holes in VLSI metallization. Scanning of CW laser in poly-Si film led to growth of a single-crystal Si layer on SiO₂ to fabricate 3-D (dimensional) devices successfully. Direct writing with pyrolytic reaction was put into practice for interconnection restructuring. In the photochemical process, lower temperature epitaxial growth of Si and dry cleaning of a Si wafer employing Hg lamp irradiation were noted. Directional etching was performed by sidewall film formation, while resolution of better than 0.5 µm was difficult to obtain due to diffraction limit. It was proposed that higher resolution would be obtained by introduction of a nonlinear process which enhanced pattern contrast.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Application of Photoexcited Reaction to VLSI Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 32
EP - 40
AU - Yasuhiro HORIIKE
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - Recent progress on photoexcited process applications to fabricating of VLSI and flat panel devices in Japan has been reviewed. The excimer laser melt technique makes it possible to form large-grain poly-Si film on a glass substrate, improving TFT electrical characteristics, and to fill metals into high-aspect-ratio contact holes in VLSI metallization. Scanning of CW laser in poly-Si film led to growth of a single-crystal Si layer on SiO₂ to fabricate 3-D (dimensional) devices successfully. Direct writing with pyrolytic reaction was put into practice for interconnection restructuring. In the photochemical process, lower temperature epitaxial growth of Si and dry cleaning of a Si wafer employing Hg lamp irradiation were noted. Directional etching was performed by sidewall film formation, while resolution of better than 0.5 µm was difficult to obtain due to diffraction limit. It was proposed that higher resolution would be obtained by introduction of a nonlinear process which enhanced pattern contrast.
ER -