Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation

Satoshi MATSUDA; Nobuyuki ITOH; Chihiro YOSHINO; Yoshiroh TSUBOI; Yasuhiro KATSUMATA; Hiroshi IWAI

Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation

Satoshi MATSUDA, Nobuyuki ITOH, Chihiro YOSHINO, Yoshiroh TSUBOI, Yasuhiro KATSUMATA, Hiroshi IWAI

Full Text Views

0

Share
Cite this

Summary :

Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO₂ filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.124-128

Publication Date: 1994/02/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))

Category: Process Simulation

Cite this

Copy

Satoshi MATSUDA, Nobuyuki ITOH, Chihiro YOSHINO, Yoshiroh TSUBOI, Yasuhiro KATSUMATA, Hiroshi IWAI, "Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 2, pp. 124-128, February 1994, doi: .
Abstract: Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO₂ filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_2_124/_p

Copy

@ARTICLE{e77-c_2_124,
author={Satoshi MATSUDA, Nobuyuki ITOH, Chihiro YOSHINO, Yoshiroh TSUBOI, Yasuhiro KATSUMATA, Hiroshi IWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation},
year={1994},
volume={E77-C},
number={2},
pages={124-128},
abstract={Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO₂ filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.},
keywords={},
doi={},
ISSN={},
month={February},}

Copy

TY - JOUR
TI - Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 124
EP - 128
AU - Satoshi MATSUDA
AU - Nobuyuki ITOH
AU - Chihiro YOSHINO
AU - Yoshiroh TSUBOI
AU - Yasuhiro KATSUMATA
AU - Hiroshi IWAI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1994
AB - Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO₂ filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.
ER -