A Proposal of New Multiple-Valued Mask-ROM Design

Yasushi KUBOTA; Shinji TOYOYAMA; Yoji KANIE; Shuhei TSUCHIMOTO

A Proposal of New Multiple-Valued Mask-ROM Design

Yasushi KUBOTA, Shinji TOYOYAMA, Yoji KANIE, Shuhei TSUCHIMOTO

Full Text Views

0

Share
Cite this

Summary :

A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.4 pp.601-607

Publication Date: 1994/04/25

Publicized

Online ISSN

DOI

Type of Manuscript: PAPER

Category: Integrated Electronics

Cite this

Copy

Yasushi KUBOTA, Shinji TOYOYAMA, Yoji KANIE, Shuhei TSUCHIMOTO, "A Proposal of New Multiple-Valued Mask-ROM Design" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 4, pp. 601-607, April 1994, doi: .
Abstract: A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_4_601/_p

Copy

@ARTICLE{e77-c_4_601,
author={Yasushi KUBOTA, Shinji TOYOYAMA, Yoji KANIE, Shuhei TSUCHIMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Proposal of New Multiple-Valued Mask-ROM Design},
year={1994},
volume={E77-C},
number={4},
pages={601-607},
abstract={A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.},
keywords={},
doi={},
ISSN={},
month={April},}

Copy

TY - JOUR
TI - A Proposal of New Multiple-Valued Mask-ROM Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 601
EP - 607
AU - Yasushi KUBOTA
AU - Shinji TOYOYAMA
AU - Yoji KANIE
AU - Shuhei TSUCHIMOTO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1994
AB - A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.
ER -