Electron Transport Mechanism through Porphyrin Polyimide Langmuir-Blodgett Films

Mitsumasa IWAMOTO; Tohru KUBOTA

Electron Transport Mechanism through Porphyrin Polyimide Langmuir-Blodgett Films

Mitsumasa IWAMOTO, Tohru KUBOTA

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We fabricated junctions with a porphyrin polyimide (PORPI) monolayer, and then investigated the electron transport properties of the junctions from the current-voltage (I-V) and d²V/dI²-V measurements. Polyimide LB films without porphyrin were used as tunneling barriers. One large peak was seen at a voltage around 1.9 V, due to the excitation of electron transitions in PORPI molecules, whereas a step structure was not observed in the I-V characteristic.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.5 pp.662-665

Publication Date: 1994/05/25

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Type of Manuscript: Special Section PAPER (Special Section on Organic Functional Devices)

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Mitsumasa IWAMOTO, Tohru KUBOTA, "Electron Transport Mechanism through Porphyrin Polyimide Langmuir-Blodgett Films" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 5, pp. 662-665, May 1994, doi: .
Abstract: We fabricated junctions with a porphyrin polyimide (PORPI) monolayer, and then investigated the electron transport properties of the junctions from the current-voltage (I-V) and d²V/dI²-V measurements. Polyimide LB films without porphyrin were used as tunneling barriers. One large peak was seen at a voltage around 1.9 V, due to the excitation of electron transitions in PORPI molecules, whereas a step structure was not observed in the I-V characteristic.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_5_662/_p

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@ARTICLE{e77-c_5_662,
author={Mitsumasa IWAMOTO, Tohru KUBOTA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electron Transport Mechanism through Porphyrin Polyimide Langmuir-Blodgett Films},
year={1994},
volume={E77-C},
number={5},
pages={662-665},
abstract={We fabricated junctions with a porphyrin polyimide (PORPI) monolayer, and then investigated the electron transport properties of the junctions from the current-voltage (I-V) and d²V/dI²-V measurements. Polyimide LB films without porphyrin were used as tunneling barriers. One large peak was seen at a voltage around 1.9 V, due to the excitation of electron transitions in PORPI molecules, whereas a step structure was not observed in the I-V characteristic.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Electron Transport Mechanism through Porphyrin Polyimide Langmuir-Blodgett Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 662
EP - 665
AU - Mitsumasa IWAMOTO
AU - Tohru KUBOTA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1994
AB - We fabricated junctions with a porphyrin polyimide (PORPI) monolayer, and then investigated the electron transport properties of the junctions from the current-voltage (I-V) and d²V/dI²-V measurements. Polyimide LB films without porphyrin were used as tunneling barriers. One large peak was seen at a voltage around 1.9 V, due to the excitation of electron transitions in PORPI molecules, whereas a step structure was not observed in the I-V characteristic.
ER -