This paper proposes a waveguide type optical amplifier which is constructed in 1.3 at.% Nd doped yttrium gallium garnet thin films deposited on yttrium aluminum garnet substrates by using RF sputtering . The crystalline thin film with a satisfactory stoichiometric composition is obtained by annealing at 1000
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Mitsuhiro WADA, Yasumitsu MIYAZAKI, "Amplification Characteristics of Waveguide Type Optical Amplifier Using Nd Doped Garnet Thin Film" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 7, pp. 1138-1145, July 1994, doi: .
Abstract: This paper proposes a waveguide type optical amplifier which is constructed in 1.3 at.% Nd doped yttrium gallium garnet thin films deposited on yttrium aluminum garnet substrates by using RF sputtering . The crystalline thin film with a satisfactory stoichiometric composition is obtained by annealing at 1000
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_7_1138/_p
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@ARTICLE{e77-c_7_1138,
author={Mitsuhiro WADA, Yasumitsu MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Amplification Characteristics of Waveguide Type Optical Amplifier Using Nd Doped Garnet Thin Film},
year={1994},
volume={E77-C},
number={7},
pages={1138-1145},
abstract={This paper proposes a waveguide type optical amplifier which is constructed in 1.3 at.% Nd doped yttrium gallium garnet thin films deposited on yttrium aluminum garnet substrates by using RF sputtering . The crystalline thin film with a satisfactory stoichiometric composition is obtained by annealing at 1000
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Amplification Characteristics of Waveguide Type Optical Amplifier Using Nd Doped Garnet Thin Film
T2 - IEICE TRANSACTIONS on Electronics
SP - 1138
EP - 1145
AU - Mitsuhiro WADA
AU - Yasumitsu MIYAZAKI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1994
AB - This paper proposes a waveguide type optical amplifier which is constructed in 1.3 at.% Nd doped yttrium gallium garnet thin films deposited on yttrium aluminum garnet substrates by using RF sputtering . The crystalline thin film with a satisfactory stoichiometric composition is obtained by annealing at 1000
ER -