High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation

Shoji YAMAHATA; Yutaka MATSUOKA; Tadao ISHIBASHI

High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation

Shoji YAMAHATA, Yutaka MATSUOKA, Tadao ISHIBASHI

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We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O⁺) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O⁺-implanted extrinsic base layers. The highly resistive O⁺-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency f_T of 68 GHz and a maximum oscillation frequency f_max of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher f_max of 110 GHz due to reduced base/collector capacitance C_BC and its f_max remains above 100 GHz, even at a low collector current of 1 mA. The C_BC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1437-1443

Publication Date: 1994/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)

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Shoji YAMAHATA, Yutaka MATSUOKA, Tadao ISHIBASHI, "High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 9, pp. 1437-1443, September 1994, doi: .
Abstract: We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O⁺) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O⁺-implanted extrinsic base layers. The highly resistive O⁺-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency f_T of 68 GHz and a maximum oscillation frequency f_max of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher f_max of 110 GHz due to reduced base/collector capacitance C_BC and its f_max remains above 100 GHz, even at a low collector current of 1 mA. The C_BC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1437/_p

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@ARTICLE{e77-c_9_1437,
author={Shoji YAMAHATA, Yutaka MATSUOKA, Tadao ISHIBASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation},
year={1994},
volume={E77-C},
number={9},
pages={1437-1443},
abstract={We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O⁺) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O⁺-implanted extrinsic base layers. The highly resistive O⁺-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency f_T of 68 GHz and a maximum oscillation frequency f_max of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher f_max of 110 GHz due to reduced base/collector capacitance C_BC and its f_max remains above 100 GHz, even at a low collector current of 1 mA. The C_BC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1437
EP - 1443
AU - Shoji YAMAHATA
AU - Yutaka MATSUOKA
AU - Tadao ISHIBASHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O⁺) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O⁺-implanted extrinsic base layers. The highly resistive O⁺-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency f_T of 68 GHz and a maximum oscillation frequency f_max of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher f_max of 110 GHz due to reduced base/collector capacitance C_BC and its f_max remains above 100 GHz, even at a low collector current of 1 mA. The C_BC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.
ER -