Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology

Takumi NITTONO; Koichi NAGATA; Yoshiki YAMAUCHI; Takashi MAKIMURA; Hiroshi ITO; Osaake NAKAJIMA

Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology

Takumi NITTONO, Koichi NAGATA, Yoshiki YAMAUCHI, Takashi MAKIMURA, Hiroshi ITO, Osaake NAKAJIMA

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This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm² yields an f_T of 103 GHz and an f_max of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm² in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1455-1463

Publication Date: 1994/09/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Takumi NITTONO, Koichi NAGATA, Yoshiki YAMAUCHI, Takashi MAKIMURA, Hiroshi ITO, Osaake NAKAJIMA, "Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 9, pp. 1455-1463, September 1994, doi: .
Abstract: This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm² yields an f_T of 103 GHz and an f_max of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm² in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1455/_p

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@ARTICLE{e77-c_9_1455,
author={Takumi NITTONO, Koichi NAGATA, Yoshiki YAMAUCHI, Takashi MAKIMURA, Hiroshi ITO, Osaake NAKAJIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology},
year={1994},
volume={E77-C},
number={9},
pages={1455-1463},
abstract={This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm² yields an f_T of 103 GHz and an f_max of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm² in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 1455
EP - 1463
AU - Takumi NITTONO
AU - Koichi NAGATA
AU - Yoshiki YAMAUCHI
AU - Takashi MAKIMURA
AU - Hiroshi ITO
AU - Osaake NAKAJIMA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm² yields an f_T of 103 GHz and an f_max of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm² in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.
ER -