Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O<SUB>2</SUB>

Nobuhiro MATSUSHITA; Kenji NOMA; Shigeki NAKAGAWA; Masahiko NAOE

Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O₂

Nobuhiro MATSUSHITA, Kenji NOMA, Shigeki NAKAGAWA, Masahiko NAOE

Full Text Views

1

Share
Cite this

Summary :

Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe₂O₃ at substrate temperature of 600 using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O₂ of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure P_Xe(0.0-0.18 Pa) were investigated. Films deposited at various P_Xe were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R_a of 8.3 nm was obtained at P_Xe of 0.10 Pa. Since saturation 4πM_s of 5.1 kG and perpendicular anisotropy constant K_u1 of 4.2310⁵ J・m^-3 were larger than those of bulk BaM ferrite of 4.8 kG and 3.3010⁵ J・m^-3, respectively, these films appeared promising for use as perpendicular recording media.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.11 pp.1562-1566

Publication Date: 1995/11/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Ultra High Density Information Storage Technologies)

Category

Cite this

Copy

Nobuhiro MATSUSHITA, Kenji NOMA, Shigeki NAKAGAWA, Masahiko NAOE, "Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 11, pp. 1562-1566, November 1995, doi: .
Abstract: Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe₂O₃ at substrate temperature of 600 using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O₂ of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure P_Xe(0.0-0.18 Pa) were investigated. Films deposited at various P_Xe were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R_a of 8.3 nm was obtained at P_Xe of 0.10 Pa. Since saturation 4πM_s of 5.1 kG and perpendicular anisotropy constant K_u1 of 4.2310⁵ J・m^-3 were larger than those of bulk BaM ferrite of 4.8 kG and 3.3010⁵ J・m^-3, respectively, these films appeared promising for use as perpendicular recording media.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_11_1562/_p

Copy

@ARTICLE{e78-c_11_1562,
author={Nobuhiro MATSUSHITA, Kenji NOMA, Shigeki NAKAGAWA, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2},
year={1995},
volume={E78-C},
number={11},
pages={1562-1566},
abstract={Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe₂O₃ at substrate temperature of 600 using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O₂ of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure P_Xe(0.0-0.18 Pa) were investigated. Films deposited at various P_Xe were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R_a of 8.3 nm was obtained at P_Xe of 0.10 Pa. Since saturation 4πM_s of 5.1 kG and perpendicular anisotropy constant K_u1 of 4.2310⁵ J・m^-3 were larger than those of bulk BaM ferrite of 4.8 kG and 3.3010⁵ J・m^-3, respectively, these films appeared promising for use as perpendicular recording media.},
keywords={},
doi={},
ISSN={},
month={November},}

Copy

TY - JOUR
TI - Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2
T2 - IEICE TRANSACTIONS on Electronics
SP - 1562
EP - 1566
AU - Nobuhiro MATSUSHITA
AU - Kenji NOMA
AU - Shigeki NAKAGAWA
AU - Masahiko NAOE
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1995
AB - Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe₂O₃ at substrate temperature of 600 using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O₂ of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure P_Xe(0.0-0.18 Pa) were investigated. Films deposited at various P_Xe were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R_a of 8.3 nm was obtained at P_Xe of 0.10 Pa. Since saturation 4πM_s of 5.1 kG and perpendicular anisotropy constant K_u1 of 4.2310⁵ J・m^-3 were larger than those of bulk BaM ferrite of 4.8 kG and 3.3010⁵ J・m^-3, respectively, these films appeared promising for use as perpendicular recording media.
ER -