A new device consisting of an optical pulse generation section and pulse coding section monolithically integrated on a single-chip has been developed. The pulse generation section consists of a multiple quantum well (MQW) electroabsorption modulator integrated with an MQW DFB laser. The modulator operates at large-signal modulation and low voltage (from 2 to 3-V DC bias with a 3.2-V peak-to-peak RF signal). The second modulator is operated independently as a pulse encoder. An approximately transform-limited optical pulse train, whose full width at half maximum (FWHM) in the time domain is less than 17-ps and spectral FWHM is 28-GHz, is obtained with a repetition frequency of 10-GHz. Compressive strain is introduced in both InGaAsP quantum wells in order to obtain efficient device characteristics. These include a low threshold current (18-mA) for the laser, and low driving voltage (30-dB for 3-V swing) and high-speed operation (over 12-GHz for a 3-dB bandwidth) for the modulators. Demonstrations show that this new device generates short optical pulses encoded by a pseudo-random signal at a rate of 10 Gbit/s. This is the first time 10 Gbit/s modulation has been achieved with a multi-section electroabsorption modulator/DFB laser integrated light source. This monolithic device is expected to be applied to optical soliton transmitters.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Koichi WAKITA, Kenji SATO, Isamu KOTAKA, Yasuhiro KONDO, Mitsuo YAMAMOTO, "Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 1, pp. 50-54, January 1995, doi: .
Abstract: A new device consisting of an optical pulse generation section and pulse coding section monolithically integrated on a single-chip has been developed. The pulse generation section consists of a multiple quantum well (MQW) electroabsorption modulator integrated with an MQW DFB laser. The modulator operates at large-signal modulation and low voltage (from 2 to 3-V DC bias with a 3.2-V peak-to-peak RF signal). The second modulator is operated independently as a pulse encoder. An approximately transform-limited optical pulse train, whose full width at half maximum (FWHM) in the time domain is less than 17-ps and spectral FWHM is 28-GHz, is obtained with a repetition frequency of 10-GHz. Compressive strain is introduced in both InGaAsP quantum wells in order to obtain efficient device characteristics. These include a low threshold current (18-mA) for the laser, and low driving voltage (30-dB for 3-V swing) and high-speed operation (over 12-GHz for a 3-dB bandwidth) for the modulators. Demonstrations show that this new device generates short optical pulses encoded by a pseudo-random signal at a rate of 10 Gbit/s. This is the first time 10 Gbit/s modulation has been achieved with a multi-section electroabsorption modulator/DFB laser integrated light source. This monolithic device is expected to be applied to optical soliton transmitters.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_1_50/_p
Copy
@ARTICLE{e78-c_1_50,
author={Koichi WAKITA, Kenji SATO, Isamu KOTAKA, Yasuhiro KONDO, Mitsuo YAMAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source},
year={1995},
volume={E78-C},
number={1},
pages={50-54},
abstract={A new device consisting of an optical pulse generation section and pulse coding section monolithically integrated on a single-chip has been developed. The pulse generation section consists of a multiple quantum well (MQW) electroabsorption modulator integrated with an MQW DFB laser. The modulator operates at large-signal modulation and low voltage (from 2 to 3-V DC bias with a 3.2-V peak-to-peak RF signal). The second modulator is operated independently as a pulse encoder. An approximately transform-limited optical pulse train, whose full width at half maximum (FWHM) in the time domain is less than 17-ps and spectral FWHM is 28-GHz, is obtained with a repetition frequency of 10-GHz. Compressive strain is introduced in both InGaAsP quantum wells in order to obtain efficient device characteristics. These include a low threshold current (18-mA) for the laser, and low driving voltage (30-dB for 3-V swing) and high-speed operation (over 12-GHz for a 3-dB bandwidth) for the modulators. Demonstrations show that this new device generates short optical pulses encoded by a pseudo-random signal at a rate of 10 Gbit/s. This is the first time 10 Gbit/s modulation has been achieved with a multi-section electroabsorption modulator/DFB laser integrated light source. This monolithic device is expected to be applied to optical soliton transmitters.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source
T2 - IEICE TRANSACTIONS on Electronics
SP - 50
EP - 54
AU - Koichi WAKITA
AU - Kenji SATO
AU - Isamu KOTAKA
AU - Yasuhiro KONDO
AU - Mitsuo YAMAMOTO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1995
AB - A new device consisting of an optical pulse generation section and pulse coding section monolithically integrated on a single-chip has been developed. The pulse generation section consists of a multiple quantum well (MQW) electroabsorption modulator integrated with an MQW DFB laser. The modulator operates at large-signal modulation and low voltage (from 2 to 3-V DC bias with a 3.2-V peak-to-peak RF signal). The second modulator is operated independently as a pulse encoder. An approximately transform-limited optical pulse train, whose full width at half maximum (FWHM) in the time domain is less than 17-ps and spectral FWHM is 28-GHz, is obtained with a repetition frequency of 10-GHz. Compressive strain is introduced in both InGaAsP quantum wells in order to obtain efficient device characteristics. These include a low threshold current (18-mA) for the laser, and low driving voltage (30-dB for 3-V swing) and high-speed operation (over 12-GHz for a 3-dB bandwidth) for the modulators. Demonstrations show that this new device generates short optical pulses encoded by a pseudo-random signal at a rate of 10 Gbit/s. This is the first time 10 Gbit/s modulation has been achieved with a multi-section electroabsorption modulator/DFB laser integrated light source. This monolithic device is expected to be applied to optical soliton transmitters.
ER -