Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors

Hiroki NAKAJIMA; Kenji KURISHIMA; Shoji YAMAHATA; Takashi KOBAYASHI; Yutaka MATSUOKA

Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors

Hiroki NAKAJIMA, Kenji KURISHIMA, Shoji YAMAHATA, Takashi KOBAYASHI, Yutaka MATSUOKA

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Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 12, 22, 25, and 220 µm² on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 12-µm² transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency f_T of the smallest 12-µm² transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the f_T176 GHz achieved by the largest 220-µm² transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of f_T100 GHz at submilliampere collector currents of I_c0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.2 pp.186-192

Publication Date: 1995/02/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Hiroki NAKAJIMA, Kenji KURISHIMA, Shoji YAMAHATA, Takashi KOBAYASHI, Yutaka MATSUOKA, "Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 2, pp. 186-192, February 1995, doi: .
Abstract: Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 12, 22, 25, and 220 µm² on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 12-µm² transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency f_T of the smallest 12-µm² transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the f_T176 GHz achieved by the largest 220-µm² transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of f_T100 GHz at submilliampere collector currents of I_c0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_2_186/_p

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@ARTICLE{e78-c_2_186,
author={Hiroki NAKAJIMA, Kenji KURISHIMA, Shoji YAMAHATA, Takashi KOBAYASHI, Yutaka MATSUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors},
year={1995},
volume={E78-C},
number={2},
pages={186-192},
abstract={Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 12, 22, 25, and 220 µm² on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 12-µm² transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency f_T of the smallest 12-µm² transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the f_T176 GHz achieved by the largest 220-µm² transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of f_T100 GHz at submilliampere collector currents of I_c0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 186
EP - 192
AU - Hiroki NAKAJIMA
AU - Kenji KURISHIMA
AU - Shoji YAMAHATA
AU - Takashi KOBAYASHI
AU - Yutaka MATSUOKA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1995
AB - Self-aligned InP/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with emitter electrodes of 12, 22, 25, and 220 µm² on the same wafer to investigate the influence of lateral scaling on device performance. DC characterization of these devices showed that InP/InGaAs HBTs are less subject to the emitter-size effect than GaAs-based HBTs. Common-emitter current gain β of the smallest 12-µm² transistor was approximately 60 which is high enough for practical use. High-frequency characteristics of the transistors were almost the same in spite of the large difference in device size. Unity current-gain cutoff frequency f_T of the smallest 12-µm² transistor was as high as 163 GHz at a collector current of 2.3 mA, which ranks with the f_T176 GHz achieved by the largest 220-µm² transistor at a collector current of 45 mA. The smallest device also showed an excellent high-speed performance of f_T100 GHz at submilliampere collector currents of I_c0.6 mA. The results indicate that small-lateral-dimension InP/InGaAs HBTs are applicable to high-speed ICs with low power dissipation.
ER -