A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs

Kazumi NISHIMURA; Kiyomitsu ONODERA; Kou INOUE; Masami TOKUMITSU; Fumiaki HYUGA; Kimiyoshi YAMASAKI

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs

Kazumi NISHIMURA, Kiyomitsu ONODERA, Kou INOUE, Masami TOKUMITSU, Fumiaki HYUGA, Kimiyoshi YAMASAKI

Full Text Views

0

Share
Cite this

Summary :

We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.8 pp.907-910

Publication Date: 1995/08/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)

Category

Cite this

Copy

Kazumi NISHIMURA, Kiyomitsu ONODERA, Kou INOUE, Masami TOKUMITSU, Fumiaki HYUGA, Kimiyoshi YAMASAKI, "A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 8, pp. 907-910, August 1995, doi: .
Abstract: We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_8_907/_p

Copy

@ARTICLE{e78-c_8_907,
author={Kazumi NISHIMURA, Kiyomitsu ONODERA, Kou INOUE, Masami TOKUMITSU, Fumiaki HYUGA, Kimiyoshi YAMASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs},
year={1995},
volume={E78-C},
number={8},
pages={907-910},
abstract={We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.},
keywords={},
doi={},
ISSN={},
month={August},}

Copy

TY - JOUR
TI - A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 907
EP - 910
AU - Kazumi NISHIMURA
AU - Kiyomitsu ONODERA
AU - Kou INOUE
AU - Masami TOKUMITSU
AU - Fumiaki HYUGA
AU - Kimiyoshi YAMASAKI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1995
AB - We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.
ER -