A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology

Hiroyuki SAKAI; Yorito OTA; Kaoru INOUE; Takayuki YOSHIDA; Kazuaki TAKAHASHI; Suguru FUJITA; Morikazu SAGAWA

A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology

Hiroyuki SAKAI, Yorito OTA, Kaoru INOUE, Takayuki YOSHIDA, Kazuaki TAKAHASHI, Suguru FUJITA, Morikazu SAGAWA

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A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.8 pp.971-978

Publication Date: 1995/08/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)

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Hiroyuki SAKAI, Yorito OTA, Kaoru INOUE, Takayuki YOSHIDA, Kazuaki TAKAHASHI, Suguru FUJITA, Morikazu SAGAWA, "A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 8, pp. 971-978, August 1995, doi: .
Abstract: A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_8_971/_p

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@ARTICLE{e78-c_8_971,
author={Hiroyuki SAKAI, Yorito OTA, Kaoru INOUE, Takayuki YOSHIDA, Kazuaki TAKAHASHI, Suguru FUJITA, Morikazu SAGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology},
year={1995},
volume={E78-C},
number={8},
pages={971-978},
abstract={A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 971
EP - 978
AU - Hiroyuki SAKAI
AU - Yorito OTA
AU - Kaoru INOUE
AU - Takayuki YOSHIDA
AU - Kazuaki TAKAHASHI
AU - Suguru FUJITA
AU - Morikazu SAGAWA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1995
AB - A new mm-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated by using MBB (micro bump boding) technology. Millimeter-wave characteristics of the MBB region has been estimated by electro-magnetic field analysis. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band. Several MFIC amplifiers with their designed performances have been successfully fabricated.
ER -