60-GHz HEMT-Based MMIC One-Chip Receiver

Tamio SAITO; Norio HIDAKA; Yoji OHASHI; Kazuo SHIRAKAWA; Yoshihiro KAWASAKI; Toshihiro SHIMURA; Hideyuki OIKAWA; Yoshio AOKI

60-GHz HEMT-Based MMIC One-Chip Receiver

Tamio SAITO, Norio HIDAKA, Yoji OHASHI, Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Toshihiro SHIMURA, Hideyuki OIKAWA, Yoshio AOKI

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This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1216-1222

Publication Date: 1995/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)

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Tamio SAITO, Norio HIDAKA, Yoji OHASHI, Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Toshihiro SHIMURA, Hideyuki OIKAWA, Yoshio AOKI, "60-GHz HEMT-Based MMIC One-Chip Receiver" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1216-1222, September 1995, doi: .
Abstract: This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1216/_p

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@ARTICLE{e78-c_9_1216,
author={Tamio SAITO, Norio HIDAKA, Yoji OHASHI, Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Toshihiro SHIMURA, Hideyuki OIKAWA, Yoshio AOKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={60-GHz HEMT-Based MMIC One-Chip Receiver},
year={1995},
volume={E78-C},
number={9},
pages={1216-1222},
abstract={This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - 60-GHz HEMT-Based MMIC One-Chip Receiver
T2 - IEICE TRANSACTIONS on Electronics
SP - 1216
EP - 1222
AU - Tamio SAITO
AU - Norio HIDAKA
AU - Yoji OHASHI
AU - Kazuo SHIRAKAWA
AU - Yoshihiro KAWASAKI
AU - Toshihiro SHIMURA
AU - Hideyuki OIKAWA
AU - Yoshio AOKI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.
ER -