Characterisitics of Micromechanical Electrostatic Switch for Active Matrix Displays

Takashi NISHIO; Chiharu KOSHIO; Kunimoto TSUCHIYA; Tetsuya MATSUMOTO

Characterisitics of Micromechanical Electrostatic Switch for Active Matrix Displays

Takashi NISHIO, Chiharu KOSHIO, Kunimoto TSUCHIYA, Tetsuya MATSUMOTO

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With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1292-1297

Publication Date: 1995/09/25

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Category: Electronic Displays

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Takashi NISHIO, Chiharu KOSHIO, Kunimoto TSUCHIYA, Tetsuya MATSUMOTO, "Characterisitics of Micromechanical Electrostatic Switch for Active Matrix Displays" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1292-1297, September 1995, doi: .
Abstract: With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1292/_p

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@ARTICLE{e78-c_9_1292,
author={Takashi NISHIO, Chiharu KOSHIO, Kunimoto TSUCHIYA, Tetsuya MATSUMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterisitics of Micromechanical Electrostatic Switch for Active Matrix Displays},
year={1995},
volume={E78-C},
number={9},
pages={1292-1297},
abstract={With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Characterisitics of Micromechanical Electrostatic Switch for Active Matrix Displays
T2 - IEICE TRANSACTIONS on Electronics
SP - 1292
EP - 1297
AU - Takashi NISHIO
AU - Chiharu KOSHIO
AU - Kunimoto TSUCHIYA
AU - Tetsuya MATSUMOTO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.
ER -