Passively Mode-Locked Micromechanically-Tunable Semiconductor Lasers

Yoshitada KATAGIRI; Atsushi TAKADA; Shigendo NISHI; Hiroshi ABE; Yuji UENISHI; Shinji NAGAOKA

Passively Mode-Locked Micromechanically-Tunable Semiconductor Lasers

Yoshitada KATAGIRI, Atsushi TAKADA, Shigendo NISHI, Hiroshi ABE, Yuji UENISHI, Shinji NAGAOKA

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We propose a mechanically tunable passively mode-locked semiconductor laser with a high repetition rate using a simple configuration with a moving mirror located very close to a laser facet. This scheme is demonstrated for the first time by a novel micromechanical laser consisting of an InGaAsP/InP multisegment laser with a monolithic moving micro-mirror driven by an electrostatic comb structure. The main advantage of this laser is the capability of generating high-quality mode-locked pulses stabilized by a phase-locked loop (PLL) with low residual phase noise in a wide repetition-rate tuning range. This paper describes the basic concept and tuning performances utilizing the micromechanical passively mode-locked laser in 22-GHz fundamental mode-locking and in its second-harmonic mode-locking.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.2 pp.151-159

Publication Date: 1998/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultrashort Optical Pulse Technologies and their Applications)

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Yoshitada KATAGIRI, Atsushi TAKADA, Shigendo NISHI, Hiroshi ABE, Yuji UENISHI, Shinji NAGAOKA, "Passively Mode-Locked Micromechanically-Tunable Semiconductor Lasers" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 2, pp. 151-159, February 1998, doi: .
Abstract: We propose a mechanically tunable passively mode-locked semiconductor laser with a high repetition rate using a simple configuration with a moving mirror located very close to a laser facet. This scheme is demonstrated for the first time by a novel micromechanical laser consisting of an InGaAsP/InP multisegment laser with a monolithic moving micro-mirror driven by an electrostatic comb structure. The main advantage of this laser is the capability of generating high-quality mode-locked pulses stabilized by a phase-locked loop (PLL) with low residual phase noise in a wide repetition-rate tuning range. This paper describes the basic concept and tuning performances utilizing the micromechanical passively mode-locked laser in 22-GHz fundamental mode-locking and in its second-harmonic mode-locking.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e81-c_2_151/_p

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@ARTICLE{e81-c_2_151,
author={Yoshitada KATAGIRI, Atsushi TAKADA, Shigendo NISHI, Hiroshi ABE, Yuji UENISHI, Shinji NAGAOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Passively Mode-Locked Micromechanically-Tunable Semiconductor Lasers},
year={1998},
volume={E81-C},
number={2},
pages={151-159},
abstract={We propose a mechanically tunable passively mode-locked semiconductor laser with a high repetition rate using a simple configuration with a moving mirror located very close to a laser facet. This scheme is demonstrated for the first time by a novel micromechanical laser consisting of an InGaAsP/InP multisegment laser with a monolithic moving micro-mirror driven by an electrostatic comb structure. The main advantage of this laser is the capability of generating high-quality mode-locked pulses stabilized by a phase-locked loop (PLL) with low residual phase noise in a wide repetition-rate tuning range. This paper describes the basic concept and tuning performances utilizing the micromechanical passively mode-locked laser in 22-GHz fundamental mode-locking and in its second-harmonic mode-locking.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Passively Mode-Locked Micromechanically-Tunable Semiconductor Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 151
EP - 159
AU - Yoshitada KATAGIRI
AU - Atsushi TAKADA
AU - Shigendo NISHI
AU - Hiroshi ABE
AU - Yuji UENISHI
AU - Shinji NAGAOKA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1998
AB - We propose a mechanically tunable passively mode-locked semiconductor laser with a high repetition rate using a simple configuration with a moving mirror located very close to a laser facet. This scheme is demonstrated for the first time by a novel micromechanical laser consisting of an InGaAsP/InP multisegment laser with a monolithic moving micro-mirror driven by an electrostatic comb structure. The main advantage of this laser is the capability of generating high-quality mode-locked pulses stabilized by a phase-locked loop (PLL) with low residual phase noise in a wide repetition-rate tuning range. This paper describes the basic concept and tuning performances utilizing the micromechanical passively mode-locked laser in 22-GHz fundamental mode-locking and in its second-harmonic mode-locking.
ER -