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Kazuaki TAKAHASHI, Suguru FUJITA, Hiroyuki YABUKI, Takayuki YOSHIDA, Yoshito IKEDA, Hiroyuki SAKAI, Morikazu SAGAWA, "Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 6, pp. 827-833, June 1998, doi: .
Abstract: This paper describes new millimeter-wave ICs based on flip-chip bonding using micro bumps on a low cost silicon substrate, named millimeter-wave flip-chip ICs (MFICs). They have significant advantages such as good performance, low cost and excellent flexibility in the active device selection which makes them superior to conventional monolithic microwave integrated circuits (MMICs). In order to demonstrate these advantages, a K-band front-end block for a broadband wireless communication equipment was designed and fabricated. This front-end block consists of four MFIC chips: a low noise amplifier (LNA), a down converter and two medium power amplifiers. These chips are designed to satisfy stable operation conditions using a simplified model derived for micro bump bonding (MBB). In experimental measurements; the LNA using heterojunction field-effect transistors (HFETs) had an 18 dB gain, the down converter using an HFET had a 9. 5 dB conversion loss, and two power amplifiers using heterojunction bipolar transistors (HBTs) had saturated powers of 13. 0 dBm and 11. 7 dBm, respectively. The performance for each of the developed ICs agreed with the designed values, and satisfied circuit requirements. These results show that the MFIC technique is a potential technology for manufacturing multi-functional millimeter-wave ICs.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e81-c_6_827/_p
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@ARTICLE{e81-c_6_827,
author={Kazuaki TAKAHASHI, Suguru FUJITA, Hiroyuki YABUKI, Takayuki YOSHIDA, Yoshito IKEDA, Hiroyuki SAKAI, Morikazu SAGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology},
year={1998},
volume={E81-C},
number={6},
pages={827-833},
abstract={This paper describes new millimeter-wave ICs based on flip-chip bonding using micro bumps on a low cost silicon substrate, named millimeter-wave flip-chip ICs (MFICs). They have significant advantages such as good performance, low cost and excellent flexibility in the active device selection which makes them superior to conventional monolithic microwave integrated circuits (MMICs). In order to demonstrate these advantages, a K-band front-end block for a broadband wireless communication equipment was designed and fabricated. This front-end block consists of four MFIC chips: a low noise amplifier (LNA), a down converter and two medium power amplifiers. These chips are designed to satisfy stable operation conditions using a simplified model derived for micro bump bonding (MBB). In experimental measurements; the LNA using heterojunction field-effect transistors (HFETs) had an 18 dB gain, the down converter using an HFET had a 9. 5 dB conversion loss, and two power amplifiers using heterojunction bipolar transistors (HBTs) had saturated powers of 13. 0 dBm and 11. 7 dBm, respectively. The performance for each of the developed ICs agreed with the designed values, and satisfied circuit requirements. These results show that the MFIC technique is a potential technology for manufacturing multi-functional millimeter-wave ICs.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 827
EP - 833
AU - Kazuaki TAKAHASHI
AU - Suguru FUJITA
AU - Hiroyuki YABUKI
AU - Takayuki YOSHIDA
AU - Yoshito IKEDA
AU - Hiroyuki SAKAI
AU - Morikazu SAGAWA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1998
AB - This paper describes new millimeter-wave ICs based on flip-chip bonding using micro bumps on a low cost silicon substrate, named millimeter-wave flip-chip ICs (MFICs). They have significant advantages such as good performance, low cost and excellent flexibility in the active device selection which makes them superior to conventional monolithic microwave integrated circuits (MMICs). In order to demonstrate these advantages, a K-band front-end block for a broadband wireless communication equipment was designed and fabricated. This front-end block consists of four MFIC chips: a low noise amplifier (LNA), a down converter and two medium power amplifiers. These chips are designed to satisfy stable operation conditions using a simplified model derived for micro bump bonding (MBB). In experimental measurements; the LNA using heterojunction field-effect transistors (HFETs) had an 18 dB gain, the down converter using an HFET had a 9. 5 dB conversion loss, and two power amplifiers using heterojunction bipolar transistors (HBTs) had saturated powers of 13. 0 dBm and 11. 7 dBm, respectively. The performance for each of the developed ICs agreed with the designed values, and satisfied circuit requirements. These results show that the MFIC technique is a potential technology for manufacturing multi-functional millimeter-wave ICs.
ER -
English
