Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs

Karol KALNA; Asen ASENOV

Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs

Karol KALNA, Asen ASENOV

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Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in self-consistent MC simulation. Thermionic tunnelling starts at very low drain voltages but then quickly saturates. Therefore, it should not drastically affect the performance of scaled devices. Impact ionization threshold occurs at greater drain voltages which should assure a reasonable operation voltage scale for all scaled PHEMTs.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.330-335

Publication Date: 2003/03/01

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Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))

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Karol KALNA, Asen ASENOV, "Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 330-335, March 2003, doi: .
Abstract: Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in self-consistent MC simulation. Thermionic tunnelling starts at very low drain voltages but then quickly saturates. Therefore, it should not drastically affect the performance of scaled devices. Impact ionization threshold occurs at greater drain voltages which should assure a reasonable operation voltage scale for all scaled PHEMTs.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_330/_p

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@ARTICLE{e86-c_3_330,
author={Karol KALNA, Asen ASENOV, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs},
year={2003},
volume={E86-C},
number={3},
pages={330-335},
abstract={Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in self-consistent MC simulation. Thermionic tunnelling starts at very low drain voltages but then quickly saturates. Therefore, it should not drastically affect the performance of scaled devices. Impact ionization threshold occurs at greater drain voltages which should assure a reasonable operation voltage scale for all scaled PHEMTs.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 330
EP - 335
AU - Karol KALNA
AU - Asen ASENOV
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in self-consistent MC simulation. Thermionic tunnelling starts at very low drain voltages but then quickly saturates. Therefore, it should not drastically affect the performance of scaled devices. Impact ionization threshold occurs at greater drain voltages which should assure a reasonable operation voltage scale for all scaled PHEMTs.
ER -