A 10 Gbase Ethernet Transceiver (LAN PHY) in a 1.8 V, 0.18 µm SOI/CMOS Technology

Tsutomu YOSHIMURA; Kimio UEDA; Jun TAKASOH; Harufusa KONDOH

A 10 Gbase Ethernet Transceiver (LAN PHY) in a 1.8 V, 0.18 µm SOI/CMOS Technology

Tsutomu YOSHIMURA, Kimio UEDA, Jun TAKASOH, Harufusa KONDOH

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In this paper, we present a 10 Gbase Ethernet Transceiver that is suitable for 10 Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18 µm SOI/CMOS process and dissipates 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10 GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.4 pp.643-651

Publication Date: 2003/04/01

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Type of Manuscript: Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)

Category: Design Methods and Implementation

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Tsutomu YOSHIMURA, Kimio UEDA, Jun TAKASOH, Harufusa KONDOH, "A 10 Gbase Ethernet Transceiver (LAN PHY) in a 1.8 V, 0.18 µm SOI/CMOS Technology" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 4, pp. 643-651, April 2003, doi: .
Abstract: In this paper, we present a 10 Gbase Ethernet Transceiver that is suitable for 10 Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18 µm SOI/CMOS process and dissipates 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10 GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_4_643/_p

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@ARTICLE{e86-c_4_643,
author={Tsutomu YOSHIMURA, Kimio UEDA, Jun TAKASOH, Harufusa KONDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 10 Gbase Ethernet Transceiver (LAN PHY) in a 1.8 V, 0.18 µm SOI/CMOS Technology},
year={2003},
volume={E86-C},
number={4},
pages={643-651},
abstract={In this paper, we present a 10 Gbase Ethernet Transceiver that is suitable for 10 Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18 µm SOI/CMOS process and dissipates 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10 GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - A 10 Gbase Ethernet Transceiver (LAN PHY) in a 1.8 V, 0.18 µm SOI/CMOS Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 643
EP - 651
AU - Tsutomu YOSHIMURA
AU - Kimio UEDA
AU - Jun TAKASOH
AU - Harufusa KONDOH
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2003
AB - In this paper, we present a 10 Gbase Ethernet Transceiver that is suitable for 10 Gb/s Ethernet applications. The 10 Gbase Ethernet Transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.18 µm SOI/CMOS process and dissipates 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this 10 GbE transceiver realizes a low power, low cost and compact solution for the exponentially increasing need of broadband network applications.
ER -