Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs

Takako YASUI; Tomofumi FURUTA; Tadao ISHIBASHI; Hiroshi ITO

Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs

Takako YASUI, Tomofumi FURUTA, Tadao ISHIBASHI, Hiroshi ITO

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The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.5 pp.864-866

Publication Date: 2003/05/01

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Type of Manuscript: LETTER

Category: Lasers, Quantum Electronics

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Takako YASUI, Tomofumi FURUTA, Tadao ISHIBASHI, Hiroshi ITO, "Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 5, pp. 864-866, May 2003, doi: .
Abstract: The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_5_864/_p

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@ARTICLE{e86-c_5_864,
author={Takako YASUI, Tomofumi FURUTA, Tadao ISHIBASHI, Hiroshi ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs},
year={2003},
volume={E86-C},
number={5},
pages={864-866},
abstract={The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs
T2 - IEICE TRANSACTIONS on Electronics
SP - 864
EP - 866
AU - Takako YASUI
AU - Tomofumi FURUTA
AU - Tadao ISHIBASHI
AU - Hiroshi ITO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2003
AB - The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.
ER -