Reactive ECR-Sputter-Deposition of Ni-Zn Ferrite Thin-Films for Backlayer of PMR Media

Hirofumi WADA; Setsuo YAMAMOTO; Hiroki KURISU; Mitsuru MATSUURA

Reactive ECR-Sputter-Deposition of Ni-Zn Ferrite Thin-Films for Backlayer of PMR Media

Hirofumi WADA, Setsuo YAMAMOTO, Hiroki KURISU, Mitsuru MATSUURA

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A reactive sputtering method using an Electron-Cyclotron-Resonance (ECR) microwave plasma was used to deposit Ni-Zn ferrite thin-films for a soft magnetic backlayer of Co-containing spinel ferrite thin-film perpendicular magnetic recording (PMR) media. The Ni-Zn spinel ferrite thin-films with a preferential orientation of (100) and a relatively low coercivity of 15 Oe were obtained at a high deposition rate of 14 nm/min and at a temperature below 200 degrees C. Although post-annealing treatment in air at 200 degrees C was effective to decrease the coercivity of the Ni-Zn ferrite thin-films, the saturation magnetization and initial permeability decreased and the surface smoothness was deteriorated simultaneously. The Ni-Zn ferrite thin-films prepared by ECR sputtering are promising as the backlayer of the perpendicular magnetic recording medium, but further improvement is required in terms of the soft magnetic properties, the grain size and the surface roughness.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.9 pp.1846-1850

Publication Date: 2003/09/01

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Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress of High-Density Disk Storage)

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Hirofumi WADA, Setsuo YAMAMOTO, Hiroki KURISU, Mitsuru MATSUURA, "Reactive ECR-Sputter-Deposition of Ni-Zn Ferrite Thin-Films for Backlayer of PMR Media" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 9, pp. 1846-1850, September 2003, doi: .
Abstract: A reactive sputtering method using an Electron-Cyclotron-Resonance (ECR) microwave plasma was used to deposit Ni-Zn ferrite thin-films for a soft magnetic backlayer of Co-containing spinel ferrite thin-film perpendicular magnetic recording (PMR) media. The Ni-Zn spinel ferrite thin-films with a preferential orientation of (100) and a relatively low coercivity of 15 Oe were obtained at a high deposition rate of 14 nm/min and at a temperature below 200 degrees C. Although post-annealing treatment in air at 200 degrees C was effective to decrease the coercivity of the Ni-Zn ferrite thin-films, the saturation magnetization and initial permeability decreased and the surface smoothness was deteriorated simultaneously. The Ni-Zn ferrite thin-films prepared by ECR sputtering are promising as the backlayer of the perpendicular magnetic recording medium, but further improvement is required in terms of the soft magnetic properties, the grain size and the surface roughness.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_9_1846/_p

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@ARTICLE{e86-c_9_1846,
author={Hirofumi WADA, Setsuo YAMAMOTO, Hiroki KURISU, Mitsuru MATSUURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reactive ECR-Sputter-Deposition of Ni-Zn Ferrite Thin-Films for Backlayer of PMR Media},
year={2003},
volume={E86-C},
number={9},
pages={1846-1850},
abstract={A reactive sputtering method using an Electron-Cyclotron-Resonance (ECR) microwave plasma was used to deposit Ni-Zn ferrite thin-films for a soft magnetic backlayer of Co-containing spinel ferrite thin-film perpendicular magnetic recording (PMR) media. The Ni-Zn spinel ferrite thin-films with a preferential orientation of (100) and a relatively low coercivity of 15 Oe were obtained at a high deposition rate of 14 nm/min and at a temperature below 200 degrees C. Although post-annealing treatment in air at 200 degrees C was effective to decrease the coercivity of the Ni-Zn ferrite thin-films, the saturation magnetization and initial permeability decreased and the surface smoothness was deteriorated simultaneously. The Ni-Zn ferrite thin-films prepared by ECR sputtering are promising as the backlayer of the perpendicular magnetic recording medium, but further improvement is required in terms of the soft magnetic properties, the grain size and the surface roughness.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Reactive ECR-Sputter-Deposition of Ni-Zn Ferrite Thin-Films for Backlayer of PMR Media
T2 - IEICE TRANSACTIONS on Electronics
SP - 1846
EP - 1850
AU - Hirofumi WADA
AU - Setsuo YAMAMOTO
AU - Hiroki KURISU
AU - Mitsuru MATSUURA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2003
AB - A reactive sputtering method using an Electron-Cyclotron-Resonance (ECR) microwave plasma was used to deposit Ni-Zn ferrite thin-films for a soft magnetic backlayer of Co-containing spinel ferrite thin-film perpendicular magnetic recording (PMR) media. The Ni-Zn spinel ferrite thin-films with a preferential orientation of (100) and a relatively low coercivity of 15 Oe were obtained at a high deposition rate of 14 nm/min and at a temperature below 200 degrees C. Although post-annealing treatment in air at 200 degrees C was effective to decrease the coercivity of the Ni-Zn ferrite thin-films, the saturation magnetization and initial permeability decreased and the surface smoothness was deteriorated simultaneously. The Ni-Zn ferrite thin-films prepared by ECR sputtering are promising as the backlayer of the perpendicular magnetic recording medium, but further improvement is required in terms of the soft magnetic properties, the grain size and the surface roughness.
ER -