Effect of Purge Time on the Properties of HfO<SUB>2</SUB> Films Prepared by Atomic Layer Deposition

Takaaki KAWAHARA; Kazuyoshi TORII

Effect of Purge Time on the Properties of HfO₂ Films Prepared by Atomic Layer Deposition

Takaaki KAWAHARA, Kazuyoshi TORII

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The process mapping of the ALD process of HfO₂ using HfCl₄ and H₂O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H₂O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO₂/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.1 pp.2-8

Publication Date: 2004/01/01

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Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)

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Takaaki KAWAHARA, Kazuyoshi TORII, "Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 1, pp. 2-8, January 2004, doi: .
Abstract: The process mapping of the ALD process of HfO₂ using HfCl₄ and H₂O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H₂O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO₂/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e87-c_1_2/_p

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@ARTICLE{e87-c_1_2,
author={Takaaki KAWAHARA, Kazuyoshi TORII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition},
year={2004},
volume={E87-C},
number={1},
pages={2-8},
abstract={The process mapping of the ALD process of HfO₂ using HfCl₄ and H₂O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H₂O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO₂/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 2
EP - 8
AU - Takaaki KAWAHARA
AU - Kazuyoshi TORII
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2004
AB - The process mapping of the ALD process of HfO₂ using HfCl₄ and H₂O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H₂O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO₂/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.
ER -