Fabrication of La-Doped YBCO and SrTiO<SUB>3</SUB>-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane

Seiji ADACHI; Hironori WAKANA; Yoshihiro ISHIMARU; Masahiro HORIBE; Yoshinobu TARUTANI; Keiichi TANABE

Fabrication of La-Doped YBCO and SrTiO₃-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane

Seiji ADACHI, Hironori WAKANA, Yoshihiro ISHIMARU, Masahiro HORIBE, Yoshinobu TARUTANI, Keiichi TANABE

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The deposition conditions of Y_0.9Ba_1.9La_0.2Cu₃O_y (La-YBCO) and (LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) thin films were studied with the aim of fabricating ramp-edge Josephson junctions on a superconducting ground plane. These films were deposited by a magnetron sputtering method and utilized as a base electrode and an insulating layer under the electrode, respectively. YBa₂Cu₃O_y thick films grown by liquid phase epitaxy (LPE-YBCO) were used for a ground plane. Insertion of a SrTiO₃ buffer layer between LSAT and LPE-YBCO significantly improved the flatness of the film surface. La-YBCO films with a flat surface and T_c (zero) of 87K were reproducibly obtained by DC sputtering. We have fabricated ramp-edge Josephson junctions using these films. Resistively and capacitively shunted junction (RCSJ)-like characteristics were observed in them. An I_c spread of 10.2% (at 4.2K, average I_c = 0.5 mA) was obtained for a 1000-junction series-array.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.2 pp.206-211

Publication Date: 2004/02/01

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Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)

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Seiji ADACHI, Hironori WAKANA, Yoshihiro ISHIMARU, Masahiro HORIBE, Yoshinobu TARUTANI, Keiichi TANABE, "Fabrication of La-Doped YBCO and SrTiO3-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 2, pp. 206-211, February 2004, doi: .
Abstract: The deposition conditions of Y_0.9Ba_1.9La_0.2Cu₃O_y (La-YBCO) and (LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) thin films were studied with the aim of fabricating ramp-edge Josephson junctions on a superconducting ground plane. These films were deposited by a magnetron sputtering method and utilized as a base electrode and an insulating layer under the electrode, respectively. YBa₂Cu₃O_y thick films grown by liquid phase epitaxy (LPE-YBCO) were used for a ground plane. Insertion of a SrTiO₃ buffer layer between LSAT and LPE-YBCO significantly improved the flatness of the film surface. La-YBCO films with a flat surface and T_c (zero) of 87K were reproducibly obtained by DC sputtering. We have fabricated ramp-edge Josephson junctions using these films. Resistively and capacitively shunted junction (RCSJ)-like characteristics were observed in them. An I_c spread of 10.2% (at 4.2K, average I_c = 0.5 mA) was obtained for a 1000-junction series-array.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e87-c_2_206/_p

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@ARTICLE{e87-c_2_206,
author={Seiji ADACHI, Hironori WAKANA, Yoshihiro ISHIMARU, Masahiro HORIBE, Yoshinobu TARUTANI, Keiichi TANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of La-Doped YBCO and SrTiO3-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane},
year={2004},
volume={E87-C},
number={2},
pages={206-211},
abstract={The deposition conditions of Y_0.9Ba_1.9La_0.2Cu₃O_y (La-YBCO) and (LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) thin films were studied with the aim of fabricating ramp-edge Josephson junctions on a superconducting ground plane. These films were deposited by a magnetron sputtering method and utilized as a base electrode and an insulating layer under the electrode, respectively. YBa₂Cu₃O_y thick films grown by liquid phase epitaxy (LPE-YBCO) were used for a ground plane. Insertion of a SrTiO₃ buffer layer between LSAT and LPE-YBCO significantly improved the flatness of the film surface. La-YBCO films with a flat surface and T_c (zero) of 87K were reproducibly obtained by DC sputtering. We have fabricated ramp-edge Josephson junctions using these films. Resistively and capacitively shunted junction (RCSJ)-like characteristics were observed in them. An I_c spread of 10.2% (at 4.2K, average I_c = 0.5 mA) was obtained for a 1000-junction series-array.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Fabrication of La-Doped YBCO and SrTiO3-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane
T2 - IEICE TRANSACTIONS on Electronics
SP - 206
EP - 211
AU - Seiji ADACHI
AU - Hironori WAKANA
AU - Yoshihiro ISHIMARU
AU - Masahiro HORIBE
AU - Yoshinobu TARUTANI
AU - Keiichi TANABE
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2004
AB - The deposition conditions of Y_0.9Ba_1.9La_0.2Cu₃O_y (La-YBCO) and (LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) thin films were studied with the aim of fabricating ramp-edge Josephson junctions on a superconducting ground plane. These films were deposited by a magnetron sputtering method and utilized as a base electrode and an insulating layer under the electrode, respectively. YBa₂Cu₃O_y thick films grown by liquid phase epitaxy (LPE-YBCO) were used for a ground plane. Insertion of a SrTiO₃ buffer layer between LSAT and LPE-YBCO significantly improved the flatness of the film surface. La-YBCO films with a flat surface and T_c (zero) of 87K were reproducibly obtained by DC sputtering. We have fabricated ramp-edge Josephson junctions using these films. Resistively and capacitively shunted junction (RCSJ)-like characteristics were observed in them. An I_c spread of 10.2% (at 4.2K, average I_c = 0.5 mA) was obtained for a 1000-junction series-array.
ER -